1 MEGABIT 128K X 8 SRAM Search Results

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T he CYM1422 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 32K x 8 static

smd AL5

Contextual Info: CYM1423 pyppucq SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1423 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 64K x 4 static

HD04

Abstract: CYM1421HD70C
Contextual Info: _ CYM1421 SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T he CYM1421 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. T he module is

Contextual Info: CYM1421 -128K x 8 Static RAM Module CYPRESS •— SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module The CYM1421 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. The module is constructed using four 32K * 8 static

Contextual Info: CYM1422 = 128K x 8 Static RAM Module PRELIMINARY C y p r e ss SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module The CYM1422 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is

ns 250n

Abstract: 64k x 4 sram sram 64k CYM1423PD45C cym1423pd
Contextual Info: _ CYM1423 CYPRESS ' SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T h e CYM 1423 is a high-perform ance 1-megabit static R A M m odule organized as 128K words by 8 bits. T his m odule is

Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

CHN 949

Abstract: tr/pcb-2-1/TRANSISTOR chn 602
Contextual Info: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

142235

Contextual Info: CYM1422 CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • Higb-speed CMOS SRAMs — Access time of 35 ns The CYM1422 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. The module is con­

1420H

Abstract: 14-20P ax253
Contextual Info: 128K x 8 Static RAM Module SEMICONDUCTOR Features Functional Description • High-density 1-megabit SRAM module T h e C Y M 1420 is a very high perform ance 1-megabit static R A M m odule organized as 128K w ords by 8 bits. T he m odule is con­ stru cted using four 32K x 8 static R A M s

Contextual Info: 33C108 1 Megabit 128K x 8-Bit CMOS SRAM 33C108 Memory Logic Diagram FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 128K x 8 bit organization • Total dose hardness: - > 100 krad (Si), depending upon space mission

128K X 8 BIT CMOS SRAM

Contextual Info: 33C108 1 Megabit 128K x 8-Bit CMOS SRAM Memory Functional Block Diagram FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 128K x 8 bit organization • Total dose hardness: - > 100 krad (Si) - dependent upon space mission

Contextual Info: CYM1420 r — SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T h e CYM 1420 is a very high perform ance 1-megabit static R A M m odule organized as 128K words b y 8 b its .T h e m odule is con­

oasis

Abstract: 32-PIN F01A SST31LH041 Actron
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

M628128

Abstract: SOJ32
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E) 400 mils DESCRIPTION

B628

Abstract: 1 megabit 128K x 8 SRAM
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E)

CYM1421

Contextual Info: CYM1421 CYPRESS . . SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • H igh-density 1-m egabit SRAM m odule T he CYM1421 is a high-performance 1-megabit static R A M m odule organized as 128K words by 8 bits. T he module is

Contextual Info: DENSE-PAC X P ^ _ 4 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS512S8BN DESCRIPTION: The DPS512S8BN is a high speed military 5 1 2 K X 8 high-density, static RAM module comprised of four high speed ceramic 128K X 8 monolithic SRAM's, an

Contextual Info: S G S -1H 0M S 0N M628128 ^ 7 # RfflDMSItLIÊTnSORDDÊi VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE • 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

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Contextual Info: • • ti « ft* if— CYPRESS SEMICONDUCTOR Features Functional D escription • High-density 1-megabit SRAM module The CYM1423 is a high-performance 1-megabit static RAM module organized as 128K words by 8 bits. This module is constructed using four 64K x 4 static

Contextual Info: /T T S G S -T H O M S O N ^7# «»IILIIgTMDtg® M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE • 128K x 8 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

628128

Abstract: 628128 SRAM
Contextual Info: SGS-1H0 MS0 N \m M628128 VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE • 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE

Contextual Info: 52E Gl D • 003Ö13E S G S -T H O M S O N TflO ■ S G T H s 6 T ¡*f s - thohson M628128 VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE ■ 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE • EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20,25ns ■ LOW Vcc DATA RETENTION: 2V