0Q38 Search Results

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0 G 3 A - 0 7 7 8 - 0 0 3DNOVOO JR GP D 1 A CDNTINUDUS STRIP DN REELS. Q.0Q381 [.000150] MIN TIN OVER

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0 G 3 A - 0 7 6 4 - 0 0 3DNOVOO JR GP D 1 n A 15.80 CDNTINUDUS STRIP DN REELS. Q.0Q381 [.000150] MIN TIN OVER

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0 G 3 A - 0 7 6 1 - 0 0 3DNOVOO JR GP D 1 A CDNTINUDUS STRIP DN REELS. Q.0Q381 [.000150] MIN TIN OVER

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS REDRAWN PER 0 G 3 A - 0 7 6 1 - 0 0 3DNOVOO JR GP D 1 A CDNTINUDUS STRIP DN REELS. Q.0Q381 [.000150] MIN TIN OVER

v9511

Abstract: T1464
Contextual Info: PRELIMINARY 4 MEG x 64 DRAM MODULE 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard nout in a 168-pin, dual-in-line memory m odule E IVIM) • High-performance CMOS silico i -gate process • Single +3.3V ±0.3V power supply• All device pins are TTL-compat ,ble

circuit diagram with IC 7476

Abstract: 600/DG34-1021-36-1012-F
Contextual Info: ADVANCE I^ IC R D N 32K, 64K SYNCHRONOUS SRAM MODULE X MT2LSYT3272B2, MT4LSYT6472B2 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View 160-Lead, Dual Read-out DIMM

WT6L

Abstract: MT81D264
Contextual Info: ADVANCE MT4LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1, 2, 4 MEG x 64 RURST EDO DRAM MODULES p ilC R O N 1,2, 4 MEG x 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line m em ory module (DIMM)

tc 97101

Contextual Info: ADVANCE |V |C = R O N 1 MEG DRAM MODULE X MT16LD T 164(S) 64 DRAM MODULE 1 MEG x 64 DRAM FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V +0.3V power supply

D018

Abstract: D019 D032 D051 THMY7232B0EG-80 F71R D038 CB1196
Contextual Info: T O S H IB A THMY7232B0EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232B0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TÒ59SM704FT DRAMs and PLL/Registers on a printed circuit board.

GP 140

Abstract: 931AM 63603-1
Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0 G 3 A - 0 7 7 8 - 0 0 3DNOVOO JR GP D 4 .7 5 ± 0 .0 8 1 [. 18 7 ± .0 0 3 ] A 1.40 [.0 5 5 ] DIA DIMPLE

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0G 3 A -0 7 77 -0 0 3DNOVOO JR GP D 6.35±0.08 [.2 5 0 ± .0 0 3 ] 1 $1.78 1.65 n 5 - 0 7 0 . 0 6 5

Contextual Info: DENSE-PAC 1152 Megabit CMOS DRAM MICROSYSTEMS DP3D16MS72PKW5 ADVANCED INFORMATION D ESCRIPTIO N : The DP3D16MS72PKW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks

R2A3 02

Abstract: R2A3 M1518 R2A3 load
Contextual Info: TOSHIBA THMY721610BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721610BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFTL DRAMs and PLL/Registers on a printed circuit board.

S63525

Abstract: S-63525 63525-1 931AM s6352 GP 140
Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS REDRAWN PER 0 G 3 A -0 7 78 -0 0 3DNOVOO JR GP D 1 4.7 5 ±0 .0 8 [. 18 7 ± .0 0 3 ] 1.40 [.0 55 ] A DIA DIM PLE

HYM7V75AS1601

Contextual Info: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION

KA3143

Abstract: KMM374S823BT-GL 0q38
Contextual Info: KMM374S823BT PC100 SDRAM MODULE KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL. DESCRIPTION FEATURE The Samsung KMM374S823BT is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Asus

Contextual Info: « P '! 'I l l ' ,t ’<7> h i, ' •’ *,-,Nr . -M 7a“ RC ' 1 .i? d u s ' ¡09| ON B n UN!, L J A N l Ü A i) 1 - U ' 1 r:l ' ÍSA Rt S , .nP ')!J1 ,iH Ri) DÛ 'j1; ’!j 1 - E Z jk>7¿ Ay_Mjsr, ,‘D A M P ' JPFM .! •, JAi'hi1) Aj1r~Í ’j ~ AU[i '0

Contextual Info: HB56UW873EJN Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-703 Z Preliminary Rev. 0.0 Jan. 10, 1997 Description The HB56UW873EJN Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Contextual Info: O K I Semiconductor M SC23841A-XXBS20/PS20 8,388,608-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23841A-xxBS20/DS20 is a fully decoded 8,388,608-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs 4M x 4 in SOJ packages

Contextual Info: SEE » • TTSIEB? 0036432 723 ■SGTH 7 ^ ^ - Z 3 - /V SGS-THOMSON M46Z256 M46Z256Y iIUira RDDgi S G S-TH0HS0N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA ■ INTEGRATED LOW POWER SRAM, POWER­ FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM­

jeida dram 88 pin

Abstract: 4P32 MT16D
Contextual Info: n iC m I n N M T16D 88C 232 2 MEG x 32, 4 MEG x 16 IC D R AM C AR D T IC DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 PIN# SYMBOL P IN * SYMBOL PIN# 1