0Q170 Search Results

Contextual Info: g MC34025 MC33025 MOTOROLA Advance Information High Speed Double-Ended PWM Controller The MC34025 series are high speed, fixed frequency, double-ended pulse width modulator controllers optimized for high frequency operation. They are specifically designed for O ff-Line and D C -to -D C converter

Contextual Info: WhoI H EW LETT w L'nM P A C K A R D Low Profile T-l 3 mm LED Lamps Technical Data HLMP-1350 HLMP-1450 HLMP-1550 Features Description • Low Profile Height • Sm all T -l Size Diam eter 3.18 mm (0.125 inch) • High Intensity • IC Com patible • Choice o f 3 Bright Colors

2SK757

Abstract: 251C
Contextual Info: 2SK757 P o w e r F-MOS FET 2SK757 Silicon N-channel Power F-M O S FET • P ackage Dimensions ■ Features • L ow ON r e s is ta n c e R ds o n : Unit: mm (o n ) = 0 . 2 2 i l ( ty p .) R ds • H ig h s w itc h in g r a t e : t r = 6 0 n s ( t y p .)

Contextual Info: Transistors Digital transistors built-in resistors DTC314TU / DTC314TK / DTC314TS •F e a tu re s •E x te rn a l dimensions (Units: mm) In addition to the features of regular digital transistors, DTC314TU 2 .0 ± 0.2 1 ) Low VcE(sat) m akes these transis­

Contextual Info: CXL5003P/M SONY. CMOS-CCD 1 H Delay Line for PAL Description CXL5003P/CXL5003M are general purpose CCD delay line ICs which provide 1H delay time of PAL. Features . • . • Low power dissipation 110 mW Typ. Small size package (8-pin DIP, SOP) Low differential gain D G =3% (Typ.)

Contextual Info: 32E I • Ô23fc.320 001707Ô IS IP BSP 60. BSP 62 PNP Silicon Darlington Transistors SIEMENS/ SPCLi SEMICONDS T - 3 3 « • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 50.BSP 52 NPN ) Marking O rdering co d e (1 2 -m m tape)

Contextual Info: 3SE D • Ö53b320 Q017QÛ3 3 Hi SIP SIPMOS N Channel MOSFET T - 2 1 ' -O S ' SIEMENS/ SPCLi SEMICONDS BSP 88 Preliminary Data • • • • • SIPMOS - enhancement mode Drain-source voltage Vos = 240V Continuous drain current l B = 0.29A Drain-source on-resistance

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

HFD3200

Contextual Info: IH0N1 MSSlfiBO QQ17Qbb RTR b7E D HFD3200 and HFE4200 Series ST Fiber-DIP ST-FD LEDs and Integrated Receivers FEATURES • Cost effective plastic PCB mountable package . Operates with 100/140, 85/125, 62.5/125, and 50/125 micron fiber cable sizes . Choices of LED output power

PU3226

Abstract: 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3226 PU3226 Silicon NPN Triple-Diffused Planar Type Power Amplifier Package Dimensions U nitlm m • Features • High D C c u rre n t gain Kfe and good lin earity • Low c o lle c to r -e m itte r sa tu ratio n v o lta g e (Vc£<Sao)

Contextual Info: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!