0PB2 Search Results

0P223

Abstract: OPB253A
Contextual Info: OPTEK TECHNOLOGY INC DbE D I b ? c]asfln Op to e le ctro n ics D iv is io n b I T - 4 1 - 1 3 T R W Electronic Components Group - 7 J V Product Bulletin 528 2 Janu ary 19 8 8 R e fle ctive O bject S en sor Type OPB253A •2M 8.M .087 (1.7») .057 (1.45)

Contextual Info: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OPB253A

Abstract: 0P223 1f34 TRW 1016 IF-40 N111 J49d
Contextual Info: OPTEK TECHNOLOGY INC DfaE D I b?"]flsaa bI TRYw Optoelectronics Division TRW Electronic Components Group Product Bulletin 5262 January 1985 Reflective Object Sensor Type OPB253A •240 9.16 •itt ( 1 . 7 1 ) .057 (1.45) .135(3.43) .115 12.92) "1 r • Phototransistor output

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

DP-600

Contextual Info: OPTEK TECHNOLOGY INC DbE D | 000G31G b Optoelectronics Division • p -H TRW Electronic Components Group I TRwV -'73 Product Bulletin 5282 January 1988 Reflective Object Sensor Type OPB253A I S O 6.80) • it t (1.71) .240 (8 .1 0 ) ' .0 5 7 (1.45) .135 (3.43)