0P80 Search Results

QP802

Contextual Info: OPTEK TECHNOLOGY INC ObE D | tTTflSflO OOODl?b b O p ia s ie c iro n ic s u iv is io n T R W Electronic Components Group i i l f V Product Bulletin 5138 January 1985 N P N Silicon P h o to tra n s is to rs Types 0P800W , O P8Q1W , QP802W Fe a tu re s • Flat lensed for wide acceptance angle

cm2141

Abstract: OP802W QP802
Contextual Info: OPTEK TECHNOLOGY INC Dt, E D | t ^ a s f l o □00017b b O p io e ie c iro n ic s m v is io n T R W Electronic Components Group # V ? rV P ro d u c t Bulletin 5 1 3 8 J a n u a r y 19 8 5 NPI\I Silicon P h o to tra n s is to rs Types 0P800W , 0P8Q 1W , QP802W

Contextual Info: O P T E K T E C H N O L O G Y I N C O b E D | f c 7 i a S S Ü O p to e le c tro n ic s D iv is io n 0 O D 0 1 7 M r-m -b i T R W Electronic Components Group ¿ I I I I I I Product Bulletin 5136 January 1985 IMPIM Silicon Phototransistors Types OP8QO, 0P8Q1, OP8Q2, 0P8Ü3, 0P8Q4, 0P8Q5

ph meter circuit

Abstract: OP80G ph meter
Contextual Info: Ultra-Low Bias Current Operational Amplifier OP-80 ANALOG DEVICES FEATURES • Ultra-Low Bias Current: 300 femtoamps T y p .at +85°C 500 femtoamps T y p . at +125°C

analog devices OP- DICE CHARACTERISTICS

Contextual Info: ► Ultra-Low Bias Current Operational Amplifier OP-8O A N A LO G D E V IC E S FEATURES ture range. Input current is typically 150 fem toam ps at 25°C and in crea ses to only 300 fem toam ps at +85°C, with exceptionally high com m on-m ode and differential input im pedances. Incor­

syfer 1210 capacitor

Abstract: 6p20 5P60
Contextual Info: Dimensions �� 0505/1111 High Q, Low ESR Capacitors �� � � � �� � �� �� �� Chip Size 0505 Chip Size 1111 Length L1 1.4mm ± 0.38mm (0.055” ± 0.015”) Length (L1) + 0.51mm (+ 0.020”) 2.79mm (0.110”) – 0.25 mm (– 0.010”)

QP802

Abstract: TRANSISTOR BJ 131 0P804 0P805 Tip 26C transistor 0P130 OP803 OP805 P801 equivalent transistor T 250 TIP 141
Contextual Info: OPTEK TEC HNOLOGY INC OLE D I T T. .' 0D0D17M 2 | Optoelectronics D ivisio n T -M W o l T R W Electronic Com ponents Group Product Bulletin 5 13 6 Ja n u a ry 19 8 5 NPN Silicon Phototransistors Types OP8QO, OP8Q1, OP802. 0P8Q3, 0P8Q4, OP8Q5 Features Ab solu te M e xim u m Ratings

P130W

Contextual Info: 0 O P T E K Product Bulletin OP130W May 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, OP131W, OP132W, OP133W Features Absolute Maximum Ratings (T a = 25° C u n le ss otherwise noted • Wide irradiance pattern • Enhanced temperature range

Contextual Info: OPTEK Product Bulletin OPSOOA June 1996 NPN Silicon Phototransistors Types OP8OOA, OP8OOB, QP800C, OP8OOD Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package Mechanically and spectrally matched

OP80GP

Abstract: OP-80F AD549 OP-80 OP80F OP80G OPA128 OP80BJ OP80b ph probe amplifier
Contextual Info: Ultra-Low Bias Current Operational Amplifier OP-8O ANALOG ► D EV ICES FEATURES ture range. Input current is typically 150 fem toam ps at 25°C and in crea ses to only 300 fem toam ps at +85°C, with exceptionally high com m on-m ode and differential input im pedances. Incor­

OP-80

Abstract: TVS15
Contextual Info: i&j u TX'mfi, 0P-80 O — MMM, CMOS ANALOG DEVICES •G N D u ^ : 3 25 ß Amax « ,.1 « E ±8 ±8 ±8 Ta=25°C A ^ U E +8— 8.2 +8— 8. 2 +8— 8. 2 n » A ^ m i± 16 16 16 iÖ ^ i£ £ -4 0 —+85 -40— +85 -4 0 —-+85 / / ie mmi 0 .4 1. 5 0.2 / / /

cm2141

Abstract: IF-20 OP500 OP501 OP501SLB 11Rma OP501SLA
Contextual Info: OPTEK TECHNOLOGY INC DbE D | L^flSflD QOOOlMfi 1 | O p to e le c tro n ic s D iv is io n - b T R W Electronic Com ponents Group 7 ? rV Product Bulletin 5097 January 1965 NPI\I Silicon Phototransistors Types 0P5Q1, OP5Q1SLD, 0P501SLC, OP5Q1SLB, OP5Q1SLA F e a tu r e s

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

QP802

Abstract: OP800W TQ18 0P802W
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bTTflSflO DD0D17b b O p to e le c tro n ic s u m s i o n m m MMXWW T R W Electronic C om ponents G roup Product Bulletin 6138 January 1985 N P N Silicon Phototransistors Types 0P8Q0W, QP801W , QP802W Fe a tu re s A b s o lu te M e x im u m R a tin g s T a - 25°C unless otherwise noted

ph meter

Abstract: op amp op80 pH probe OP80FJ OP80GP OP80GS 0P80 35z4 OP80BJ precision conductivity meter
Contextual Info: Ultra-Low Bias Current Operational Amplifier A N A LO G D E V IC E S 0P-80 FEATURES • Ultra-Low Bias Current: 150 femtoamps T y p . at +25°C 300 femtoamps T y p .at +85°C

Contextual Info: OPTEK Product Bulletin OP231W February 1994 GaAIAs Hermetic Infrared Emitting Diodes Types OP231W, OP232W, OP233W Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • Wide irradiance pattern • Enhanced temperature range • Mechanically and spectrally matched

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

QP802

Abstract: 1S85 0P805 OP803 equivalent OP802 OP803 transistor m4a sac 187 0P130 OP130
Contextual Info: OPTEK TECHNOLOGY INC D I OLE t? T a 5 B 0 Optoelectronics Division T - TRW Electronic Components Group Product Bulletin 5136 January 1S85 4 =1 0Q00174 \-lo I T R w w l\IPI\l Silicon Phototransistors Types 0P8Q0, OP8 OI, OP8Q2, OP8Q3, QP804, OP8Q5 Features

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L71flSflQ 0000146 1 | Optoelectronics Division - b T RW Electronic Components Group Product Bulletin 5097 January 1965 'R Y w NPN Silicon Phototransistors Types 0P5Q1, 0P5Q1SLD, 0P501SLC, 0P5Q1SLB, 0P5Q1SLA Features • 0 .1 0 0 " 12.54 mm} lead spacing

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

5P60

Abstract: 8P20 4P70 2P70 2P40
Contextual Info: Dimensions �� 0505/1111 High Q, Low ESR Capacitors �� � � � �� � �� �� �� Chip Size 0505 Chip Size 1111 Length L1 1.55mm ± 0.15mm (0.061” ± 0.006”) Length (L1) 2.84mm ± 0.3mm (0.111” ± 0.011”) Width (W) 1.4mm ± 0.25mm (0.055” ± 0.010”)

Contextual Info: 0 .QPTEK Product Bulletin OP231W June 1996 GaAIAs Hermetic Infrared Emitting Diodes Types OP231W, OP232W, OP233W Features Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • Wide irradiance pattern • Enhanced temperature range • Mechanically and spectrally matched