0DD32S Search Results
0DD32S Datasheets Context Search
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Contextual Info: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM. |
OCR Scan |
hym581000bhy514400ahym581000bm/blm11-omw+3 | |
ic 5101 ram
Abstract: 5101 fb sebh 5101 RAM
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OCR Scan |
cs-510120b755b00d3b572gb755b+7 | |
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Contextual Info: BENCHMARQ _ Prelim inary b q 2040 Gas Gauge 1CWith SMBus Interface Features General Description >• Provides conservative and repeatable measurement of available charge in NiCd, NiMH, and Lithium Ion rechargeable batteries The bq2040 Gas Gauge IC With |
OCR Scan |
bq2040120jia16-pin00032b | |
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Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts — t CE = 35 ns • Low Power Consumption • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 |
OCR Scan |
ws57c256fstand28mil-std-883cws57c256f-70j+3 |