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    TIP3055T

    Contextual Info: D E V E L O P M E N T DATA TIP3055T T S ? -!' T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL 711GflEb DGM3t.m 174 PHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement T IP2955T they are primarily intended


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    tip3055t711gflebip2955t711002b+40043blbt--33--137110fl2b0d43bl PDF

    vp0635n5

    Abstract: vp0640 vp0640n5 VP0635N3
    Contextual Info: VP0635 VP0640 . i n c P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVqgs (max) -350V 25£i -400V 25£2 Order Number 1 Package If b v dss/ TO-39 TO-92 TO-220 DICEt -0.4A VP0635N2 VP0635N3 VP0635N5 VP0635ND -0.4A VP0640N2 VP0640N3


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    vp0635vp0640-350v-400v+7vp0635n2vp0640n2vp0635n3vp0640n3o-220vp0635n5vp0640n5 PDF