0D343 Search Results

ea423

Contextual Info: N E C E LECTRONI CS INC blE ì> m b427525 NEC 0D34317 MC-422000A 32 2,097,152 X 32-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-422000A32 is a fast-page dynamic RAM mod­ ule organized as 2,097,152 words by 32 bits and de­

DIODE IN4007

Abstract: IN4005 IN5406 diode IN4007 Diode IN4006 DIODE in4005 IN4006 IN5406 IN4007 DIODE diode in5406
Contextual Info: CRIMSON SEMI CON DUCTOR INC ' ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC _ 99D 00343 — d DE | SSlMGTb □□0D343 0 "J- - r - à f r i . ' i ' • DIODE R E C T IF IE R S • 1.0ATHRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3 .0 3 .0

Contextual Info: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FE050A, FE100A, FE150A Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

simm 72pin

Abstract: D0343
Contextual Info: NEC N E C ELECTRONICS INC hlE D • NEC Electronics Inc. b427525 DD34347 3fl5 « N E C E MC-422000AA40 2,097,152 X 40-Bit Dynamic CMOS RAM Module T -Y 4 Description Pin Configuration The M C-422000AA40 is a fa s t-p a g e dynamic RAM mod­ ule organized as 2,097,152 words by 40 bits an d de­

79c965

Abstract: AMD 79c97* lance
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

Contextual Info: KM44C16100AK CMOS D R A M ELECTR O NICS 1 6 Mx 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or

Contextual Info: P r o d u c t S p e c if ic a t io n < £ > 2 iL 0 5 Z16C30 CMOS USC UNIVERSAL S e r ia l co ntro ller FEATURES • Transparent Bisync M ode with EBCDIC or ASCII C h a ra c te r C o d e ; A u to m a tic C R C H a n d lin g ; Program mable Idle Line Condition; O ptional Preamble

MD-146

Abstract: RCV144ACFW Simultaneous voice and data modem full modem 4800 v32 serial UD10 circuit diagram of plcc modem RC144ACFW
Contextual Info: 4 L * R o c k w e ll Semiconductor Systems RCV144ACF/SP Integrated AudioSpan, Speakerphone, Modem Device for Desktop Applications Introduction Features The Rockwell RCV144ACF/SP Modem Device supports high speed data, high speed fax, AudioSpan, speakerphone, voice/audio, and VoiceView operation. It is

u2610

Contextual Info: 47E D • SIEM EN S A23Sb05 003M373 3 M Z I Z G SIEMENS AKTIENGESELLSCHAF T - T K T l- C n TV Stereo Processor TDA 6611 Preliminary Data Bipolar IC Features The TDA 6611 represents a complete TV stereo system controlled by the I2C bus. • • • • •

FE150B lucent DC-DC POWER MODULE

Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

Contextual Info: KM44C16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,

b0335

Abstract: BD337 b0338 transistor 338 D0343 b0332 IR 334 1251156 BD333 Darlington NPN Silicon Diode
Contextual Info: BD332; 334 BD336; 338 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

Contextual Info: K M 4 4 C 1 6 1 04 AS CMOS DRAM ELECTR O NICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,

cd-rom circuit diagram

Abstract: km44c4000bk KM44C4100B
Contextual Info: KM44C4000BK ELECTRONICS CMOS D R A M 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Pag 9 Mods offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

BC208 transistor

Abstract: c3277 M0178 RC336DPFL RCV3360PFL RCV3360PFUSP RCV336DPFL RCV336DPFUSP VJ54 8086 microprocessor serial communication
Contextual Info: ^ R o c k w e ll SemiconductorSystems RCV336DPFL/SP V.34 Data, V.17 Fax, AudioSpan, Voice, Speakerphone, Modem Data Pump Introduction F ea tu res The Rockwell RCV336DPFL/SP is a V.34 modem data pump family that supports data rates up to 33600 bps, fax operation up to 14400 bps. AudioSpan. voice

Contextual Info: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-410C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word x 8-bit. They have realized high speed low power consumption and high reliability by

Contextual Info: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8,1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

"Z9m"

Abstract: 1N4627US-1 Z9M y 1N4614US-1 1N4099CUR Zener Diode 13B3 "Z9m 1N4135CUR-1 DIODE D7M zener 13B3
Contextual Info: MIL SPECS 44 E D m 0000125 0034352 Ö7T • MILS INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 July 1994 MIL-S-19500/435C 20 January 1994 SUPERSEDING MIL-S-19500/435B 3 May 1993

Contextual Info: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-314F Z Rev. 6.0 Apr. 30,1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS