0D27B Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b*lE B b b S S 'm y 0D27blJ5 2ST BU87fc> APX BC878 BC880 v SMALL-SIGNAL DARLINGTON TRANSISTORS PNP epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.

BCY10

Abstract: BCY12 BCY70-BCY71-BCY72 BCY71 BCY70 BCY72 silicon planar epitaxial transistors
Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 b'IE » 0D27bBb TT3 H A P X BCY70 to 72 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A T A

Contextual Info: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.

Contextual Info: BU RR - BROW N « E SHC615 1 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • TELECOMMUNICATIONS EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3*iA

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A

BT148W-400R

Abstract: 500R 600R BT148W
Contextual Info: I I hHE D • bbiSTSl 0G272Ô4 T22 H A P X _ J ^ BT148W SERIES N AUER PH IL IP S/D IS CRE TE THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting.

JH 8203

Abstract: MS007A lucent technologies W series
Contextual Info: jAu,V yT997Da,aShee' microelectronics group Lucent Technologies Bell Labs Innovations MS007A Power Module: 40 Vdc to 100 Vdc Input; +5 Vdc Output; 7.5 W Features • Small size: 51 mm x 28 mm x 12 mm 2.00 in. x 1.10 in. x 0.46 in. ■ Output current limiting: unlimited duration

volvo FH

Abstract: lh15a 1542F
Contextual Info: SHARP | SPEC No. ISSUE: E L 0 6 8 1 0 9 Jul. 18. 1995 T o ; R E Q U E S T FOR CONFIRMATION SPECIFICATIONS Product Type Model 80 O u t p u t LCD S e g m e n t D r i v e r LH 1 5 4 2 F No. ^T h i s specifications contains 20 pages including the cover and appendix.

Q002

Abstract: SPT7610
Contextual Info: SPT76 I O @ S P T 6-BIT, 1 GSPS FLASH A/D CONVERTER ADVANCED INFORMATION SiGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • 1 : 2 Demuxed ECL Compatible Outputs • 1.0 GSPS Conversion Rate • Wide Input Bandwidth -1 .4 GHz • Low Input Capacitance - 8 pF

Contextual Info: M IT S U B IS H I MICROCOMPUTERS M 37710E4BXXXFP M37710E4BFS PROM VERSION of M 37710M 4B XXXFP DESCRIPTION The M37710E4BXXXFP is a built-in PROM single-chip mic­ rocomputers designed with high-performance CMOS sili­ con gate technology. This is housed in a 80-pin plastic

Contextual Info: International Iö R Rectifier Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 12 to 18V

Contextual Info: I I I N AUER PHILIPS/DISCRETE t.'lE D bbSa^l DD27bl]i 5 2 3 H A P X P h ilip s S em ico n d u c to rs BCX23 D a ta sh eet statu s P re lim in a ry s p e c ific a tio n d a te o f issue J u n e 1 990 Silicon planar epitaxial transistor QUICK REFERENCE DATA

Contextual Info: SiG E C P L E S S E Y S r M I C U N I U C T O R S DS 3708 - 2.4 PDSP16318/PDSP16318A COMPLEX ACCUMULATOR Supersedes version in December 1993 Digital Video & Video Digital Signal Processing 1C Handbook, HB3923-1) The PDSP16318 contains two independent 20-bit Adder/

Contextual Info: TOSHIBA TMP87PK42 CMOS 8-BIT MICROCONTROLLER TMP87PK42N The 87PK42 is a One-Tim e P R O M m icrocontroller w ith lo w -po w er 192K bits a 24K bytes p ro gram memory electrically p ro g ra m m a b le read o n ly m em o ry fo r the 87CK42 system e valu atio n .

OPA2658

Contextual Info: B U R R - BROW N E OPA265Q t 1 Dual Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW/Amp The OPA2650 is a dual, low power, wideband voltage feedback operational amplifier. It features a high band­ width of 360MHz as well as a 12-bit settling time of

photodiode amplifier

Abstract: OPT201 OPT201KP QPT201KP LED 650nm LED Laser International
Contextual Info: B U R R -B R O W N 0PT2Q1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT201 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Y59 r 120

Contextual Info: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA

Contextual Info: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78

Contextual Info: P r o d u c t S p e c if ic a t io n < £ S LG E Z86C05/C07 C M OS Z8 8-BIT MICROCONTROLLER FEATURES • The Z86C05/C07 Devices Have the Following General Characteristics: Part Z86C05 Z86C07 ROM 1Kbyte 2 Kbytes RAM 124 Bytes 124 Bytes Speed 8 MHz 12 MHz

LAW005

Contextual Info: Advance Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations LAW005-Series Power Modules: 36 Vdc to 75 Vdc Inputs; 5 W Features • Small footprint: 32 mm x 20 mm 1.25 in. x 0.8 in. ■ Low profile: 10 mm (0.40 in.) ■ Wide input voltage range: 36 Vdc to 75 Vdc

Contextual Info: Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Receivers RF1A, RF2A, RR1A, and RT1A Features • Pin-equivalent to the general-trade 26LS32 device, with improved speed, reduced power consumption, and significantly lower levels of EMI