0D15SS Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

Contextual Info: SSI 3 2 R 1 5 7 0 A R ä k m & j ä m +5, -5 V, 12-Channel MR Head Read/Write Device . A Texas Instruments Company Advance Information October 1996 DESCRIPTION FEATURES The SSI 32R1570AR is a BiCMOS monolithic integrated circuit designed for use with four-terminal