0C300 Search Results
0C300 Price and Stock
Vishay Intertechnologies MBA02040C3002FCT00Resistor: metal film; 30kΩ; THT; 400mW; ±1%; 0; 200V; Ø0.5x29mm |
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MBA02040C3002FCT00 | 3,196 | 1 |
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Vishay Intertechnologies SMM02040C3003FB300Resistor: thin film; 300kΩ; SMD; MiniMELF; 0204; 0.4W; ±1%; 200V |
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SMM02040C3003FB300 | 1,276 | 1 |
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TEKON Prüftechnik GmbH TK36SCR.05.3,00.C.300.ATest probe: ICT/FCT; 10A; Ø: 3mm; CuBe; Plating: gold-plated; 10mΩ |
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TK36SCR.05.3,00.C.300.A | 10 | 1 |
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TEKON Prüftechnik GmbH TK36SCR.05.2,30.C.300.ATest probe: ICT/FCT; 10A; Ø: 2.3mm; CuBe; Plating: gold-plated; 10mΩ |
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TK36SCR.05.2,30.C.300.A | 10 | 1 |
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TEKON Prüftechnik GmbH TK36SCR.07.2,30.C.300.ATest probe: ICT/FCT; 10A; Ø: 2.3mm; CuBe; Plating: gold-plated; 10mΩ |
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TK36SCR.07.2,30.C.300.A | 7 | 1 |
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0C300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O ptoisolator S p e c ific a tio n s _ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M 0c3 0 0 9 -M 0 c3 0 1 2 series c o n sists o f a gallium a rsen id e, infrared e m ittin g d io d e c o u p le d with a ligh t activated silico n bilateral switch, |
OCR Scan |
0c3009-m0c3012 | |
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Contextual Info: G E STATE SOLID 0 1E 19764 1 « ¡H A S op toelectronic Specifications _ Photon Coupled Isolator M 0c3009-M 0c3012 GD2722b G a A s In fra re d E m ittin g D io d e & L ig h t A c tiv a te d T ria c D riv e r T h e G E Solid S tate M 0c3009-M 0c30l2 series consists o f a gallium arsenide |
OCR Scan |
0c3009-m0c3012gd2722b0c30l2+3 | |
ccorh
Abstract: 1S89 652A 651A
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OCR Scan |
p54/74pct651/651ap54/74pct652/652a24-pin+8 | |
C3012
Abstract: MOC3010 M0c3009-M0c3012 MOC3009 MOC3012 triac 289
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OCR Scan |
moc3009-mcc3012m0c3009-m0c3012moc3009+4 | |
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Contextual Info: Oplolsolator Specifications_ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e MOC3009-MOC3012 series consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a light activated silicon bilateral switch, |
OCR Scan |
0c3009-m0c3012moc3009-moc3012 | |
SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
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am29lv2562ms29gl512nsa452sa336+7 | |
JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
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m29ew256-mbit512-mbitx8/x16+15 | |
Spansion S29GL512N11Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages |
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s29glxxxns29gl512ns29gl256ns29gl128n+4 | |
asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
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s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14 | |
FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
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s29gl-ns29gl256ns29gl128nfaa064+5 | |
120R
Abstract: C8800
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am29lv2562m120rc8800 | |
mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
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OCR Scan |
ms800mm0smc3870mc14s00bmc141000/1206+13 | |
A673 transistor
Abstract: transistor a673 b627 transistor B734 transistor a639 transistor B722 TRANSISTOR DATA diode PJ 966 transistor bc29 pj 939 diode B627
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OCR Scan |
an441/dan441mc68hc05e0m6805+10 | |
VOCODERS voip
Abstract: Key rollover
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stlc1502vocoders voipkey rollover | |
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Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, |
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s29gl-ns29gl512ns29gl256ns29gl128n+3 | |
L256MH113R
Abstract: L256ML113R
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Original |
am29lv256ml256mh113rl256ml113r | |
a22t
Abstract: S19G S29GL-N
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s29gl-ns29gl512ns29gl256ns29gl128n+2 | |
S29GL-N
Abstract: 1E300
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s29gl512/256/128ns29gl512ns29gl256ns29gl128n+2 | |
7be0Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers |
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m29ew256-mbit512-mbitx8/x16+5 | |
s29gl032m10tairContextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics |
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s29glxxxms29gl256ms29gl128ms29gl064m+6 | |
S70GL01GN00
Abstract: S29GL01GP S29GL512N
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Original |
s70gl01gn00s70gl01gns29gl01gps29gl512n | |
SA293
Abstract: SA273 988000
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am29lv256m16-bit/3216-word/32-byte56-pi+3 | |
L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
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am29lv256m16-bit/32128-word/256-byte8-word/16-byte+10 | |
29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
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s29gl-ms29gl256ms29gl128ms29gl064m+9 | |