0DQ23 Search Results
0DQ23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Ericsson MME
Abstract: 8125
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337331M 0DQ23 PGT2110/3R 00QE3 2110/3R Ericsson MME 8125 | |
Contextual Info: _ MATRA MHS Preview SûbôHSb 0DQ2377 Sb2 • — = ^ 7= |ÌMj| inriHs 1 1 5 2 - January 1991 29H531 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL TRANSCEIVER UNIT FEATURES TRANSMITTER OUTPUT TRANSISTORS FIXED TO INSIDE OF PACKAGE FOR BEST THERMAL CHARACTERISTICS. |
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29H531 MIL-STD-1553B MIL-STD-1553B. 29C530 IL-STD1553B 29T532 MIL-STD-883C 29H531 | |
ITT ZD15
Abstract: itt zd30 itt zd5.1 Zener ITT ZD27 ITT ZD13 itt ZD20 ITT ZD82 ZD39 ZD100 ZD22
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0DQ234E DO-13 ZD100 ZD110 ZD120 ZD130 ZD150 ZD160 ZD180 ZD200 ITT ZD15 itt zd30 itt zd5.1 Zener ITT ZD27 ITT ZD13 itt ZD20 ITT ZD82 ZD39 ZD22 | |
fuse code Jd 0,7A
Abstract: odv marking PM5323 PM5344 PM5361 PM5371 TU12
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PM5361 920526S7 920102S8 0GD2447 fuse code Jd 0,7A odv marking PM5323 PM5344 PM5371 TU12 | |
1I604Contextual Info: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory |
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MB82B79-17/-20 72K-BIT 8192-WORD MB82B79 300mil 28-LEAD LCC-28P-M04) C28054S-1C 1I604 | |
U4B R950
Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
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MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009 | |
4740AP
Abstract: 4830A Lts4000 4730AP 4740ar lt-s40 4840A LTS-4800AY
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LTS-4000A D0-41and D0-41L 201AD 553b3b7 D0201AD 4740AP 4830A Lts4000 4730AP 4740ar lt-s40 4840A LTS-4800AY | |
TH 201Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS LS nicliicon Snap-in T erm inal Type, U ltra-S m aller-S ized • W ithstanding 3000hours application of ripple cu rre n t at 85"C . • One rank sm aller case sized than LU series. • Higher production efficiency due to 4.0mm long terminal. |
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3000hours LLS2W560MHLY LLS2W680MHLY LLS2W680MHLZ LLS2W820MHLY LLS2W820MHLZ LLS2W101MHLY LLS2W101MHLZ LLS2W101 LLS2W121MHLY TH 201 | |
0-DQ17Contextual Info: T O S H I B A _THLY641651 FG-80,-80L,-10,-1 OL TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY641651FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of |
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THLY641651 FG-80 THLY641651FG 216-word 64-bit TC59SM708FT/FTL 0-DQ17 | |
Contextual Info: Advance Product Information ~ • J W w P IM P 50E 30 EPAC Programmable Monitoring and Diagnostic Data Acquisition 1C Electrically Programmable Analog Circuit Introduction The IM P50E30 Electrically Programmable Analog Circuit EPAC is a user-program |
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P50E30 IMP50E30 5D42T Q0G23S1 0G023S2 IMP50E30 | |
Contextual Info: Preliminary KMM364C124BJ DRAM MODULE KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS |
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KMM364C124BJ KMM364C124BJ 1Mx64 1Mx16, 1Mx16bit 42-pin 400mil 48pin | |
Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S |
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KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16 364C124AJ 1Mx16bit 42-pin 400mil 48pin |