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    0C300 Search Results

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    Vishay Intertechnologies MMA02040C3008FB300

    Resistor: thin film; 3Ω; SMD; MiniMELF; 0204; 0.4W; ±1%; 200V
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    TME MMA02040C3008FB300 659 1
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    Bristol Electronics MMA02040C3008FB300 7,888 1
    • 1 $0.25
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    • 100 $0.12
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    Avnet Asia MMA02040C3008FB300 35 Weeks 3,000
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    IXYS Corporation DPG60C300PC-TRL

    Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
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    TME DPG60C300PC-TRL 800
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    IXYS Corporation DPG30C300PC-TUB

    Diode: rectifying; SMD; 300V; 15A; 35ns; D2PAK,TO263AB; Ufmax: 1.26V
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    TME DPG30C300PC-TUB 1,400
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    Vishay Intertechnologies MCU08050C3002FP500

    Resistor: thin film; 30kΩ; SMD; 200mW; ±1%; 150V; 2x1.25x0.45mm
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    TME MCU08050C3002FP500 5,000
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    Vishay Intertechnologies MMU01020C3002FB000

    Resistor: metal film; 30kΩ; SMD; 300mW; ±1%; 150V; Ø1.1x2.2mm
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    TME MMU01020C3002FB000 10,000
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    0C300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: O ptoisolator S p e c ific a tio n s _ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M 0c3 0 0 9 -M 0 c3 0 1 2 series c o n sists o f a gallium a rsen id e, infrared e m ittin g d io d e c o u p le d with a ligh t activated silico n bilateral switch,


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    0c3009-m0c3012 PDF

    Contextual Info: G E STATE SOLID 0 1E 19764 1 « ¡H A S op toelectronic Specifications _ Photon Coupled Isolator M 0c3009-M 0c3012 GD2722b G a A s In fra re d E m ittin g D io d e & L ig h t A c tiv a te d T ria c D riv e r T h e G E Solid S tate M 0c3009-M 0c30l2 series consists o f a gallium arsenide


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    0c3009-m0c3012gd2722b0c30l2+343g227192cs-4266292cs-429s1 PDF

    ccorh

    Abstract: 1S89 652A 651A
    Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D 70^5517 0C300Ô15 P54/74PCT651/651A P54/74PCT652/652A OCTAL TRANSCEIVERS/REGISTER T M - s - a - 3 FEATURES • Full CMOS Implementation Bidirectional Bus Transceiver and Registers ■ Low Power Operation Fully TTL Compatible Input and Output Levels


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    p54/74pct651/651ap54/74pct652/652a24-pin+828-padp54/74pct651p54/74pct652/amil-std-883ccorh1s89652a651a PDF

    C3012

    Abstract: MOC3010 M0c3009-M0c3012 MOC3009 MOC3012 triac 289
    Contextual Info: SOLID STATE 01 optoelectronic Specifications »E|3ö7S0äl D Dim* Photon Coupled Isolator M 0c3009-M0c3012 G a As Infrared Em itting D iode & Light Activated Triac D river The GE Solid State 0c3009-M0c3012 series consists of a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch,


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    moc3009-mcc3012m0c3009-m0c3012moc3009+4moc3010moc301imoc3012triac 289 PDF

    Contextual Info: Oplolsolator Specifications_ M 0c3009-M 0c3012 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e MOC3009-MOC3012 series consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a light activated silicon bilateral switch,


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    0c3009-m0c3012moc3009-moc3012 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    am29lv2562ms29gl512nsa452sa336+7sa424120rsa487ee8000a78000a7ffffc58000c5ffffsa4871 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+15100ns512-word14mb/skbytes/64pc28f00am29ewha11-apr-2011js28f512m29js28f256m29js28f256js28f512pc28f00am29ewjs28f00am29ewpc28f00am29js28f00js28f256m29ewl PDF

    Spansion S29GL512N11

    Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    s29glxxxns29gl512ns29gl256ns29gl128n+4128-word/256-byte8-word/16-byte27631sb2spansion s29gl512n11 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M,S29GL128M,S29GL064M,S29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14s29glxxxn00-b-5s29gl032mlaa064asme sa388gl128ma2113s29gl256e78000s29gl128ntsop56 s29gl128nsa32sa35s29glxxxmbga-63 PDF

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    s29gl-ns29gl256ns29gl128nfaa064+5spansion s29gl128s29gl128s29gl-pgl128ngl256n PDF

    120R

    Abstract: C8800
    Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    am29lv2562m120rc8800 PDF

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


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    ms800mm0smc3870mc14s00bmc141000/1206+13m2900m10800m6800mc14500bmc141000/1200mcm6830exorciser motorola m68mm01a7642tmc68b54transistor bf 175motorola application note 6809 6844mms1117exorciser motorola m68mm01a2 PDF

    A673 transistor

    Abstract: transistor a673 b627 transistor B734 transistor a639 transistor B722 TRANSISTOR DATA diode PJ 966 transistor bc29 pj 939 diode B627
    Contextual Info: Order this document as AN441/D MOTOROLA SEM ICO N D U CTO R APPLICATION NOTE AN441 MC68HC05E0 EPROM Emulator By Peter Topping MCU Applications Group Motorola Ltd, East Kilbride INTRODUCTION The MC68HC05E0 isa versatile member of the M6805 family of microprocessors. Unlike most other versions


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    an441/dan441mc68hc05e0m6805+10a673 transistortransistor a673b627 transistorb734 transistora639 transistorb722 transistor datadiode pj 966transistor bc29pj 939 diodeb627 PDF

    VOCODERS voip

    Abstract: Key rollover
    Contextual Info: STLC1502 VOICE OVER IP PROCESSOR 1.0 GENERAL DESCRIPTION STMicroelectronics’ STLC1502 is a high performance VoIP processor specially targeted for the time effective design of IP-Phones and analog gateway applications bundled with a comprehensive embedded software solution.


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    stlc1502vocoders voipkey rollover PDF

    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    s29gl-ns29gl512ns29gl256ns29gl128n+3s29gl128ps29gl256ps29gl512p PDF

    L256MH113R

    Abstract: L256ML113R
    Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    am29lv256ml256mh113rl256ml113r PDF

    a22t

    Abstract: S19G S29GL-N
    Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    s29gl-ns29gl512ns29gl256ns29gl128n+2a22ts19g PDF

    S29GL-N

    Abstract: 1E300
    Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    s29gl512/256/128ns29gl512ns29gl256ns29gl128n+2s29gl-n1e300 PDF

    7be0

    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    m29ew256-mbit512-mbitx8/x16+5100ns512-word48mb/skbytes/647be0 PDF

    s29gl032m10tair

    Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    s29glxxxms29gl256ms29gl128ms29gl064m+6s29gl032m32megabit128-word/256-byte8-word/16-bytebga-80p-m02s29gl032m10tair PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    s70gl01gn00s70gl01gns29gl01gps29gl512n PDF

    SA293

    Abstract: SA273 988000
    Contextual Info: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    am29lv256m16-bit/3216-word/32-byte56-pi+3sa293sa273988000 PDF

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    am29lv256m16-bit/32128-word/256-byte8-word/16-byte+10l256mlsa4871bd8000sa340transistor sa427sa3708a000740-0007am29lv256sa36-110 PDF

    29gl064

    Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
    Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,


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    s29gl-ms29gl256ms29gl128ms29gl064m+9s29gl032ms29gl032as29gl064as29gl128ns29gl256n29gl064tsr056bga-63tsop-20 PDF