09MAY07 Search Results

kester 245 solder wire

Abstract: CTLB059038-004 Kester 197
Contextual Info: 501-655 Qualification Test Report 09May07 Rev A Medical Circular Plastic Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Medical Circular Plastic Connector to determine its conformance to the requirements of Product Specification 108-2249 Revision A.

EIA-364-18

Abstract: EIA-364-2 EIA-364-28 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-52 class 5 examination EIA-364-65 EIA-364-23
Contextual Info: Product Specification 108-2249 09May07 Rev A Medical Circular Plastic Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Medical Circular Plastic Connectors with push/pull locking.

74685

Abstract: 3595 AN609 Si4662DY
Contextual Info: Si4662DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74682

Abstract: 5622 AN609
Contextual Info: Si1070X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

c 5521 datasheet

Abstract: AN609
Contextual Info: Si4632DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74686

Abstract: mosfet 4423 AN609
Contextual Info: Si4650DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74600

Abstract: 8751 characteristics AN609 Si4558DY 26123
Contextual Info: Si4558DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74612

Abstract: 9613 AN609 Si4720CY
Contextual Info: Si4720CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74607

Abstract: AN609 power MOSFET spice model n mosfet pspice parameters
Contextual Info: Si4620DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74691

Abstract: AN609 SiA413DJ
Contextual Info: SiA413DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

74694

Abstract: MOSfet 4362 4362 MOSFET 23738 on 4409 SUM90P10 SUM90P10-19 transistor on 4409 AN609 SUM90P10-19L
Contextual Info: SUM90P10-19L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4093 DATASHEET

Abstract: 4093 N si2308 AN609 Si2308DS 34093
Contextual Info: Si2308DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si4701BDY 968468
Contextual Info: Si4701BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74689

Abstract: AN609 Si5915BDC
Contextual Info: Si5915BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TLDR5400

Contextual Info: TLDR5400/TLDR6400 Vishay Semiconductors High Intensity LED, ∅ 5 mm Tinted Diffused FEATURES • Exceptional brightness • Wide viewing angle • Low forward voltage e2 • 5 mm T-1¾" tinted diffused package • Deep red color • Very high intensity even at low drive currents

74687

Abstract: 4430 37210 4430 transistor AN609 Si4831BDY 236912
Contextual Info: Si4831BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

CWR06

Abstract: 1047G
Contextual Info: CWR06 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Military, Surface Mount MIL-PRF-55365/4 Qualified FEATURES • Weibull Failure Rates B, C, D Exponential M, P, R, S • Tape and Reel available per EIA 481-1 and -2 • Termination finishes available; Gold Plate,

156 Tantalum Capacitor vishay

Abstract: MIL-PRF-55365 CWR06 cwr06f
Contextual Info: CWR06 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Military, Surface Mount MIL-PRF-55365/4 Qualified FEATURES • Weibull Failure Rates B, C, D Exponential M, P, R, S • Tape and Reel available per EIA 481-1 and -2 • Termination finishes available; Gold Plate,

74605

Abstract: AN609 Si4569DY 772045
Contextual Info: Si4569DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74604

Abstract: AN609
Contextual Info: Si4565ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74688

Abstract: data sheet 74688 74688 application 7472 AN609 Si4952DY si4952
Contextual Info: Si4952DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

2242

Abstract: 74695 AN609 Si4812BDY 65630
Contextual Info: Si4812BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74684

Abstract: 4836 AN609 Si4505DY 121-872 62455
Contextual Info: Si4505DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].