09JUN2005 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST AA 22 LTR DESCRIPTION A REV PER EC 0S1 1 - 0 2 0 1 - 0 4 DATE DWN APVD 09JUN2005 LV SF MATERIAL: HOUSING - HIGH TEM PERATURE

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E V IS IO N S DATE DWN APVD REV PER ECR—0 8 —0 3 2 4 4 7 23FEB2009 DZ SY REVISED PER E C O - 10 - 0 0 0 4 4 4 19JAN 10

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 - ALL RIGHTS RESERVED. 1 8 .54 D C 2 .5 4 + 0 .0 5 B A SUGGESTED PRINTED CIRCUIT BOARD LAYOUT COMPONENT SIDE AMP 4805 REV 31MAR2000 4 3 2 1 REVISIONS

M48Z35

Abstract: M48Z35Y SOH28 PCDIP28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:

Contextual Info: T H IS D R A W ING IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC REV I S IONS D IS T RESERVED. D E S C R I P T IO N RELEASED REVISED 5 . DATE EC 0 G 3 B - 0 6 I 2E CO- 0 6 - 0 2 2 4 I 6 0 9 JUN2005

Numonyx M25P128

Abstract: M25P128 so16 M25P128 VDFPN8
Contextual Info: M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features „ 128-Mbit flash memory „ 2.7 to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 54 MHz clock rate maximum for 65 nm devices VDFPN8 (ME) 8 x 6 mm (MLP8)

SOH28

Abstract: M48Z35AV
Contextual Info: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE

JESD97

Abstract: STL20NM20N
Contextual Info: STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE STL20NM20N • ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 20 A WORLDWIDE LOWEST GATE CHARGE

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST AA 22 ALL RIGHTS RESERVED. LTR DESCRIPTION A REV PER EC 0S1 1 - 0 2 0 1 - 0 4 DATE DWN APVD 09JU N 2005 JA SF MATERIAL: HOUSING - HIGH TEM P ERATU RE

STANDARD DIN 6784

Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■

STGP7NC60HD

Contextual Info: STGB7NC60HD, STGF7NC60HD, STGP7NC60HD N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Datasheet − production data Features TAB • Low on-voltage drop VCE(sat ■ Off losses include tail current ■ Losses include diode recovery energy ■

STMicroelectronics Date Code DPAK

Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)

Contextual Info: STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE STL20NM20N • ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 20 A WORLDWIDE LOWEST GATE CHARGE

k 2608

Abstract: M48Z35 M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

P40N20

Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
Contextual Info: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP

M48Z58

Abstract: M48Z58Y SOH28
Contextual Info: M48Z58 M48Z58Y 5V, 64Kbit 8Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1

D22NM20

Abstract: STD22NM20N STD22NM20NT4 D22NM20N D22NM
Contextual Info: STD22NM20N N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1: General Features TYPE STD22NM20N • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 22 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 Ω

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E VIS IO N S LTR DESCRIPTION DATE REV PER EC 0S1 1 - 0 2 0 1 - 0 4 A DWN 0 9 JU N 2 0 0 5 LV APVD SF M A T E R IA L :

Contextual Info: Preliminary Data Sheet Part Number 856463 1575.42 MHz SAW Filter Features • • • • • • • • • • For GPS applications Usable bandwidth of 2 MHz Typical 1 dB bandwidth of 18 MHz Excellent selectivity and band rejection Low loss High attenuation

Contextual Info: EMIF10-LCD01C1 10 LINES EMI FILTER AND ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : • LCD for Mobile phones ■ Computers and printers ■ Communication systems ■ MCU Boards DESCRIPTION

M48Z35AV

Abstract: SOH28
Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE

STD22NM20N

Abstract: STD22NM20NT4
Contextual Info: STD22NM20N N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET Table 1: General Features TYPE STD22NM20N • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 22 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 Ω

M25P128 VDFPN8

Abstract: M25P128 MLP8 m25p128 PACKAGE 8x6mm VDFPN8 package M25P128
Contextual Info: M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features • 128-Mbit flash memory ■ 2.7 to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 54 MHz clock rate maximum for 65 nm devices ■ VPP = 9 V for fast program/erase mode