09-5 DIODE Search Results
09-5 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
09-5 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3.7V Li-Ion battery charge controller
Abstract: gsm mobile jammer GM862-QUAD Cell Phone Jammers project kit diode C726 Molex 53748-0504 jammer gsm gsm mobile jammer using microcontroller mobile jammer diode C725
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gm862-quadgm862-quad-py1vv03007483.7v li-ion battery charge controller+8 | |
gsm mobile jammer using microcontroller
Abstract: gsm modem sim 300 interface with microcontroller EXAMPLE FOR SEND DATA BY GPRS jammer of sar gsm mobile jammer construction of subscriber identity module RJ11 6 pin connector cell phone jammer mobile phone jammer circuit operation sim 300 processor gsm modem for project
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ez10-quad-py80269st10024agsm mobile jammer using microcontrollergsm modem sim 300 interface with microcontroller+8 | |
SID01-03
Abstract: SIE01-01
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OCR Scan |
sid01-01sid01-03sid01-06sid01-09+7 | |
P30-P33
Abstract: P2M TRANSISTOR
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zlr64400p30-p33p2m transistor | |
LM1575
Abstract: 5962-9167201QEA
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mnlm1575-x-5lm1575j16arlka04bra+1 | |
MX25L6406EM2I-12G
Abstract: MX25L6406 25l6406e MX25L6406E MX25L6406EMI-12G MX25L6406EM MX25L6406em2 mxic mx25l6406e MX25L6406EZNI-12G mx25l6406em2i
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mx25l6406epm1577mx25l6406em2i-12gmx25l6406+7 | |
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Contextual Info: MX25L6408E MX25L6408E DATASHEET P/N: PM1643 1 REV. 1.4, DEC. 09, 2013 MX25L6408E Contents FEATURES. 5 |
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mx25l6408epm1643 | |
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Contextual Info: GBI25A . GBI25M GBI25A . GBI25M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2014-09-09 ±0.2 2.2 11 ±0.2 20 ±0.2 Type Typ 5 ±0.2 3.6 2.7 1.0 10 ±0.2 4.6 ±0.2 Nominal current Nennstrom 50.1000 V Plastic case Kunststoffgehäuse |
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gbi25agbi25mul94v-0e1754+2 | |
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Contextual Info: GBI20A . GBI20M GBI20A . GBI20M Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2014-09-09 ±0.2 2.2 11 ±0.2 20 ±0.2 Type Typ 5 ±0.2 3.6 2.7 1.0 10 ±0.2 4.6 ±0.2 Nominal current Nennstrom 50.1000 V Plastic case Kunststoffgehäuse |
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gbi20agbi20mul94v-0e1754+2 | |
MX25L3255DXCI-10G
Abstract: MX25L3255D MX25L3255 MX25L3255DXCI MXIC MX MX25L3235D IN3064 24ball-BGA MX d 368 MX25L3255DXCI-10
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mx25l3255dpm1431mx25l3255dxci-10gmx25l3255+7 | |
alu 74F382
Abstract: F381 F382 MC74F382 MC74FXXXDW
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dl121ch4mc74f382mc54/74f382alu 74f382+3 | |
transistor 808
Abstract: 808 nm 1000 mw
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mil-prf-19500ratio-150transistor 808808 nm 1000 mw | |
rtl8111* Reference
Abstract: KB910QF ICH8M 676 ICS9LP505 .s79 antenna switch foxconn MS14141 R5C832 RT9173BPS 0821c
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ms-1313tps5112025vrunapl5913+16 | |
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Contextual Info: 66099 RADIATION TOLERANT TO-5 OPTOCOUPLER MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/09/03 Features: Applications: • • • • • • • • • Meets or exceeds MIL-PRF-19500 radiation requirements Current Transfer Ratio-150% typical 1kVdc electrical input to output isolation |
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mil-prf-19500ratio-150 | |
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IR7309
Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
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max1640max1641max1640eeemax1641c/d+9 | |
SK30GH123Contextual Info: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk30gh123 | |
SK30GD123Contextual Info: SK30GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk30gd123 | |
SK30GH123Contextual Info: SK30GH123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 .D : # 3 ;9 4 0/ : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk30gh123 | |
SK20GD123Contextual Info: SK20GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 0. : # 3 ;9 4 8/ : .9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk20gd123 | |
diode 5cContextual Info: SK10GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 8- : # 3 ;9 4 88 : 8- : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 8; : # 3 ;9 4 80 : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk10gd123diode 5c | |
SK30GD123Contextual Info: SK30GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 . : # 3 ;9 4 00 : /9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk30gd123 | |
SK20GD123Contextual Info: SK20GD123 # 3 0/ 4* Absolute Maximum Ratings Symbol Conditions IGBT 5,1 #6 3 0/ 4 $ #6 3 80/ 4 $<= 8099 5 0. : # 3 ;9 4 8/ : .9 : > 09 5 #6 3 80/ 4 89 B # 3 0/ 4 0D : # 3 ;9 4 8E : $<=3 0 $ 5 3 -99 5? 5%, @ 09 5? |
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sk20gd123 | |
SK30GD123
Abstract: SK30
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sk30gd123sk30 | |
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Contextual Info: High -P erf or manc e Dr BL AD E 5 mm x 5 mm x 0.6 mm IQFN TD A21 310 Dat a She et Revision 2.1, 2013-09-05 Po wer Ma nage m ent and M ulti M ark e t Edition 2013-09-05 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG |
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tda21310lg-uiqfn-32-2 | |