08SEP08 Search Results

tyco A157

Contextual Info: 4 THIS 5 DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY ^ C O COPYRIGHT ELECTRONICS CORPORATION. 2 - ,- LOC ALL INTERNATIONAL RIGHTS RESERVED. G 1 DIST R E V IS IO N S o: LTR T1 DESCRIPTION REVISED PER EC R-08-02171 DATE DWN APVD 08SEP08 HMR D D DIMENSION APPLIES EROM EDGE OE METAL

Contextual Info: Product Specification 108-1889 08Sep08 Rev A SHUR-PLUG* and SHUR-PLUG* Receptacles 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for SHUR-PLUG* and SHUR-PLUG* receptacles. The .180 inch diam eter SHUR-PLUG is only available as a straight contact

UP78

Abstract: Aaa SMD MARKING
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

TEST2600

Abstract: TSSS2600 ic 8253
Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm

TSALxxxx

Abstract: BPW41N BPW41N IR DATA BPW41N IR
Contextual Info: BPW41N Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

Si3443DV

Abstract: Si8401DB Si8401DB-T1-E1
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

BPW34 application note

Abstract: APPLICATION NOTE BpW34 BPW34 BPW34 circuit BPW34S BPW34 application
Contextual Info: BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: top view • Dimensions L x W x H in mm : 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity

Si7784DP

Abstract: Si7784DP-T1-GE3 si7784
Contextual Info: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm

Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm

82064

Contextual Info: SPICE Device Model SiR890ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SI9926CD

Abstract: Si9926CDY
Contextual Info: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiE836DF

Contextual Info: SPICE Device Model SiE836DF Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

banana jack footprint

Abstract: A26578-ND MCR03EZPJ000 NC7SZ125M5X 160-1183-1-ND 300-8571-1-ND yc248 MCR03EZPJ331 111-0702-001-ND SMA-13
Contextual Info: Bill of Materials Project: 600057.PrjPCB Variant: Standard Build Revision: B SD356EVK Evaluation Board Creation Date: 9/5/2008 11:20:27 AM Print Date: 08-Sep-08 10:49:57 AM Item Designator Manufacturer Manufacturer Part Number Distributor Distributor Part Number

Contextual Info: SPICE Device Model SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SIR888DP

Contextual Info: SPICE Device Model SIR888DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

sharp laser diodes

Abstract: TSOP855
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Photoresistors

Abstract: TEPT4400
Contextual Info: TEPT4400 Vishay Semiconductors Ambient Light Sensor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 30°

Contextual Info: TEKS5400 Vishay Semiconductors Silicon Photo Schmitt Trigger with Digital Output, RoHS Compliant FEATURES • • • • • 14355 DESCRIPTION TEKS5400 is a photo Schmitt Trigger with high radiant sensitivity, molded in a plastic package with side view lens

Contextual Info: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPV23F, BPV23FL Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 4.4 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

DFN-10

Abstract: HP4192A DG2616
Contextual Info: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high

TEMD5020X01

Abstract: J-STD-020D
Contextual Info: TEMD5020X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Reflow Soldering, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12

8ETU04-1

Abstract: 8ETU04S IRFP250
Contextual Info: 8ETU04S/8ETU04-1 Vishay High Power Products Ultrafast Rectifier, 8 A FRED PtTM FEATURES 8ETU04S 8ETU04-1 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature Base cathode 2 • Designed and qualified for industrial level

8ETH03-1

Abstract: 8ETH03S IRFP250 100170dc
Contextual Info: 8ETH03S/8ETH03-1 Vishay High Power Products Hyperfast Rectifier, 8 A FRED PtTM FEATURES • Hyperfast recovery time 8ETH03-1 8ETH03S • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level