08AUG02 Search Results

mar 521

Abstract: U1-353
Contextual Info: 4 TH IS DRAWING 7 IS UNPUBLISHED. COPYRIGHT RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. 19 2 3 ,1 9 LOC ALL RIGHTS RESERVED. AF DIST REVISIONS 50 P LTR B DE SC RI PT IO N REV PER 0 G 3 A - 0 4 5 3 - 0 2 DATE DWN APVD 08AUG02 JR DD D D 1 HOUSING

TZX24X

Abstract: TZX27B TZX10A TZX10B TZX10C TZX10D TZX11A TZX11B TZX11C TZX11D
Contextual Info: TZX. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction

Contextual Info: 21.39 [.842] 59.09 [2.326] 8 1 8 1 8 1 8 13.80 [.543] 1 3.20±0.20 [.126±.008] 3 x 13.97[.550] = 27.94 [1.100] 10.89 [.429] 53.34±0.13 [2.100±.005] RECOMMENDED PCB LAYOUT - COMPONENT SIDE VIEW EMPFOHLENER FUER LEITERPLATTE - BESTUCKUNGSSEITE ALL TOLERANCES ±0.05 [.002] UNLESS NOTED

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT MAX TEMPERATURE: 220°C 10 S COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER IEC 60 603-13 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

02T02

Contextual Info: TZMB. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization

TZX27B

Abstract: TZX10A TZX10B TZX10C TZX10D TZX11A TZX11B TZX11C TZX11D TZX12A
Contextual Info: TZX. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction

Contextual Info: 3 4 DRAWING MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNP0BLI5HED. RELEASED FOR PO BLIC ATIO N BY AMP I N C O RP O RA TE D. A L L I N T E R N A T I O N A L 0 C O P Y R I G H T 19 2 <3> ,19 LOC DI ST AF RIGHTS RESERVED. 50 REV I 5 I 0 N 5

5B1 zener diode

Abstract: zener 5V1 vishay 5c1 zener diode 4C3 diode 6b2 zener diode zener 6c2 zener 5A6 zener 5c1 zener 4c3 5B1 IR
Contextual Info: TLZ. Vishay Semiconductors Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D Silicon Epitaxial Planar D High reliability Applications Voltage stabilization

569564-4

Abstract: 569564-2 D020
Contextual Info: 4 T H I S DRAWING 0 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT 2 3 BY AMP INCORPORATED. 19 ,19 22 D IST LOC A LL R IG H T S R ES E R V E D . AA r e v isio n FRONT REAR TERMINALS SHIELD WI TH 15.85 [ .624] N A X I NON 1

Contextual Info: TZMB. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization

Contextual Info: 21.39 [.842] 59.09 [2.326] 8 1 8 1 8 1 8 13.80 [.543] 1 3.20±0.20 [.126±.008] 3 x 13.97[.550] = 27.94 [1.100] 10.89 [.429] 53.34±0.13 [2.100±.005] RECOMMENDED PCB LAYOUT - COMPONENT SIDE VIEW EMPFOHLENER FUER LEITERPLATTE - BESTUCKUNGSSEITE ALL TOLERANCES ±0.05 [.002] UNLESS NOTED