08APR2014 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2008 2 3 2014 RELEASED FOR PUBLICATION TE Connectivity AMP España S.L.U. 1 REVISIONS ALL RIGHTS RESERVED. P DESCRIPTION LTR F D 5.1 APVD LD 08APR2014 JS 3 2 6.6 1 ECR-14-002029 DWN D 1 7.21 REF DATE 7.6 11.6 1 TERMINATED DIMENSION: 6.02 # 0.13

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2008 TE Connectivity AMP España S.L.U. 1 D REF REVISIONS ALL RIGHTS RESERVED. P 3 2 DATE ECR-14-002029 DWN APVD LD 08APR2014 JS D 6.6 1 11.6 10 .0 18.4 TERMINATED DIMENSION 6.02 # 0.13 2 PACKAGING: 100 SUB-ASSEMBLIES,

Contextual Info: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A

Contextual Info: PM7744 Single phase controller with digital interface Data brief Applications • Point of load PoL DC-DC conversion  DC-DC modules Description The PM7744 is a single phase step-down controller with complete control logic and protection to realize in a simple way general DCDC converters by using a compact 3 x 3 mm

Contextual Info: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

STGW15H120F2

Contextual Info: STGW15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

Contextual Info: ESDALC8-1BF4 Low clamping single line bidirectional ESD protection Datasheet − production data Features • Low clamping voltage: 16 V IEC 61000-4-2 contact discharge 8 kV at 30 ns • Bidirectional device • Low leakage current • 0201 package • Ultra small PCB area: 0.18 mm2

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

Contextual Info: STGD6NC60H-1 N-channel 600 V, 7 A - IPAK Very fast PowerMESH IGBT Datasheet - production data Features TAB 3 2 1 IC Type VCES VCE sat max@25°C @100°C STGD6NC60H 600V <2.5V 7A • Low on voltage drop (Vcesat) • Low CRES / CIES ratio (no cross-conduction

PA66-GF

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C 20 COPYRIGHT 2 3 1 20 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - P A2 +0.3 27.4-0.5 D DESCRIPTION LTR DATE REDRAWN ECR-14-006262 14MAY2014 DWN APVD M.G. M.G. D 10.0 0.2 3.0 0.5 6.0 C 12.0 32.2 26.6 9.3 7.4

Contextual Info: STPS8H100 High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptators and on board DC/DC converters. K A NC D2PAK STPS8H100G Table 1. Device summary

Contextual Info: STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE sat = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution