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    STGWT30V60F Search Results

    STGWT30V60F Datasheets (1)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGWT30V60F
    STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 260W TO3PF Original PDF 19
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    STGWT30V60F Price and Stock

    STMicroelectronics

    STMicroelectronics STGWT30V60F

    Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
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    Vyrian STGWT30V60F 10,614
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    STGWT30V60F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A


    Original
    stgfw30v60fstgw30v60fstgwt30v60fo-247+1docid025005 PDF

    Contextual Info: STGFW30V60F, STGW30V60F, STGWT30V60F 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Very high speed switching series • Tail-less switching off 3 TO-3PF 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    stgfw30v60fstgw30v60fstgwt30v60fo-247+1docid025005 PDF

    Contextual Info: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A


    Original
    stgfw30v60fstgw30v60fstgwt30v60fo-247+1docid025005 PDF