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    085N06L Search Results

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    085N06L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP085N06LG

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    Bristol Electronics IPP085N06LG 20
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    Infineon Technologies AG IPP085N06LGAKSA1

    Power Field-Effect Transistor, 80A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics IPP085N06LGAKSA1 15,000 1
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    Infineon Technologies AG IPB085N06LG

    Transistors
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    Vyrian IPB085N06LG 690
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    085N06L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking D53

    Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.5 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L P-TO263-3-2 085N06L P-TO220-3-1 marking D53 PDF

    085N06L

    Abstract: IPB085N06L IPB085N06L G PG-TO220-3 smd marking g23
    Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L P-TO263-3-2 P-TO220-3-1 085N06L 085N06L IPB085N06L G PG-TO220-3 smd marking g23 PDF

    085N06L

    Abstract: IPB085N06L smd marking g23 PG-TO220-3 marking g23 SMD
    Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 8.2 m: 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L PG-TO263-3 P-TO262 PG-TO220-3 085N06L 085N06L smd marking g23 PG-TO220-3 marking g23 SMD PDF

    SMD MARKING D80

    Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L P-TO263-3-2 085N06L P-TO220-3-1 SMD MARKING D80 PDF

    IEC61249-2-21

    Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
    Contextual Info: 085N06L G OptiMOS Power-Transistor 085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 085N06L IEC61249-2-21 PG-TO220-3 085N06L PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF