0800Z Search Results

HD151TS305RP

Abstract: HD151TS305RPEL TS300
Contextual Info: HD151TS305RP Spread Spectrum Clock for EMI Solution REJ03D0021-0800Z Previous ADE-205-658G(Z Preliminary Rev.8.00 May.19.2003 Description The HD151TS305 is a high-performance Spread Spectrum Clock modulator. It is suitable for low EMI solution. Features

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

HSU277

Contextual Info: HSU277 Silicon Epitaxial Planar for UHF/VHF tuner Band Switch REJ03G0111-0800Z Previous: ADE-208-018G Rev.8.00 Oct.08.2003 Features • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information

HRW0302A

Contextual Info: HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z Previous: ADE-208-015G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

HN58C1001 Series

Abstract: HN58C1001-15 HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z
Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Renesas mnos

Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

Contextual Info: HRU0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0151-0800Z Previous: ADE-208-235G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z Previous: ADE-208-015G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HSU88

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

Renesas mnos

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

HN58V1001

Abstract: HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E
Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

HD74LV1GT126A

Abstract: HD74LV1GT126ACME HD74LV1GT126AVSE
Contextual Info: HD74LV1GT126A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0124–0800Z Previous ADE-205-333F (Z Rev.8.00 Sep.25.2003 Description The HD74LV1GT126A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled

HD74HC1G66

Abstract: HD74HC1G66CME HD74HC4066
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HD74LV1GT125A

Abstract: HD74LV1GT125ACME HD74LV1GT125AVSE
Contextual Info: HD74LV1GT125A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0123–0800Z Previous ADE-205-332F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT125A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled

HD74LV1GT04A

Abstract: HD74LV1GT04ACME HD74LV1GT04AVSE
Contextual Info: HD74LV1GT04A Inverter / CMOS Logic Level Shifter REJ03D0117–0800Z Previous ADE-205-327F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT04A has an inverter in a 5 pin package. The input protection circuitry on this device allows over voltage tolerance on the input, allowing the device to be used as a logic–level translator from

HD74HC1G66

Abstract: HD74HC1G66CME HD74HC4066
Contextual Info: HD74HC1G66 Analog Switch REJ03D0188–0800Z Previous ADE-205-314F (Z Rev.8.00 Jan.27.2004 Description The HD74HC1G66 is high-speed CMOS analog switch using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed. The device has low ON resistance for good transfer

HD74LV1GT32A

Abstract: HD74LV1GT32ACME HD74LV1GT32AVSE
Contextual Info: HD74LV1GT32A 2–input OR Gate / CMOS Logic Level Shifter REJ03D0120–0800Z Previous ADE-205-330F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT32A is high-speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HD74LV1GT00A

Abstract: HD74LV1GT00ACME HD74LV1GT00AVSE
Contextual Info: HD74LV1GT00A 2–input NAND Gate / CMOS Logic Level Shifter REJ03D0115–0800Z Previous ADE-205-325F (Z Rev.8.00 Sep.22.2003 Description The HD74LV1GT00A is high-speed CMOS two input NAND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of

ADE-205-326F

Abstract: HD74LV1GT02A HD74LV1GT02ACME HD74LV1GT02AVSE
Contextual Info: HD74LV1GT02A 2–input NOR Gate / CMOS Logic Level Shifter REJ03D0116–0800Z Previous ADE-205-326F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT02A is high-speed CMOS two input NOR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of