07MAY01 Search Results

Si7456DP

Contextual Info: Si7456DP New Product Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A)

Si4473DY

Contextual Info: Si4473DY New Product Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –13 APPLICATION 0.016 @ VGS = –2.5 V –11 D Battery Switch for Portable Equipment –14

Si4862DY

Contextual Info: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS

DS1642

Abstract: M48T02 M48T12
Contextual Info: M48T02 M48T12 5.0V, 16 Kbit 2Kb x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, AND POWER-FAIL CONTROL CIRCUIT BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: r i 8 THIS DRAWING IS UNPUBLISHED. S3.COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. LOC DIST GP 00 REVISIONS LTF u 2 \ C 0N T A C T -M A T E R IA L : PHOS. A P O LA R IZ A T IO N FEATURE D AMAA amp ÉAÉÉA ! T T T T 7

Contextual Info: Package Information Vishay Siliconix TOĆ263 D2PAK : 5 LEADS (For Lead Thickness 25 mil) E E1 A L2 –A– C2 D1 D L E2 1 2 Y 3 4 5 Y L3 A E B C 0.010 M A M INCHES (B) B1 C1 L1 L4 M Z (C) Section Y-Y Detail A NOTES: 1. Plane B includes maximum features of heat sink tab and plastic.

Si3905DV

Contextual Info: SPICE Device Model Si3905DV Vishay Siliconix Dual P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4465DY

Abstract: Si4465DY SPICE Device Model
Contextual Info: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

71468

Abstract: Si4467DY
Contextual Info: SPICE Device Model Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

N- and P-Channel 30-V D-S MOSFET

Abstract: Si4542DY P-CHANNEL 30V DS MOSFET
Contextual Info: SPICE Device Model Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

D2GD

Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature

Contextual Info: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic

Si3458DV

Contextual Info: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4544DY

Contextual Info: SPICE Device Model Si4544DY Vishay Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3948DV

Contextual Info: SPICE Device Model Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3445DV

Contextual Info: SPICE Device Model Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4562DY

Contextual Info: SPICE Device Model Si4562DY Vishay Siliconix Dual N- and P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2309DS

Abstract: Si2309DS SPICE Device Model
Contextual Info: SPICE Device Model Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

A12S

Abstract: Si3456DV
Contextual Info: SPICE Device Model Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2305DS

Abstract: Si2305DS SPICE Device Model
Contextual Info: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN924

Abstract: DS1642 M48T02 M48T12
Contextual Info: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOG AD RE S E RV E D. 22.50 TYP 2.50 TYP 1A PHOSPHOR BRONZE A GLASS F I L L E D POLYESTER AA 0. 7 6 j m M I N G O L D O V E R I . 2 7 / j m M I N N I C K E L ON C O N T A C T A R E A

Contextual Info: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode

Contextual Info: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic