07MAR05 Search Results
07MAR05 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. 1 3 PUBLICATION REVISIO NS .L RIGHTS RESERVED. 3 ELECTRONICS CORPORATION. AD 00 DESCRIPTION 07MAR05 BSVJRO 0.51 0 20 ] STAND -O FFS FLAME RETARDANT POLYESTER PCT, COLOR - BLACK PHOSPHOR BRONZE DUPLEX PLATED: 0.00076 .00 00 30 GOLD ON CONTACT AREA |
OCR Scan |
07MAR05 2002/95/EC I-0-100 MAR2000 | |
Toshiba TLX-1741-C3M LCD display
Abstract: kcb104vg2ca-a43 LQ088H9DR01 TOSHIBA TLX-1741-C3M KCS077VG2EA-A43 LM32P073 tlx-1741-c3m M170EN04 LP104S06-A1 DMF50081N
|
Original |
L150X2M-1 L170E3-4 AND08C351-HB AND10C209A-4HB AND10C209A-DHB AND10C209A-HB AND10C273-4HB AND10C273-DHB AND10C273-HB AND10C306L Toshiba TLX-1741-C3M LCD display kcb104vg2ca-a43 LQ088H9DR01 TOSHIBA TLX-1741-C3M KCS077VG2EA-A43 LM32P073 tlx-1741-c3m M170EN04 LP104S06-A1 DMF50081N | |
SI4888DY
Abstract: si4888dy-t1-e3 Si4888DY-T1
|
Original |
Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 S-50404--Rev. 07-Mar-05 si4888dy-t1-e3 | |
Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested Product Is D Avalanche Tested |
Original |
Si7818DN Si7818DN-T1--E3 S-50405--Rev. 07-Mar-05 | |
50403Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.600 @ VIN = 4.5 V "0.6 0.850 @ VIN = 2.5 V "0.5 1.200 @ VIN = 1.8 V "0.2 D D D D D TrenchFETr Power MOSFET 600-mW Low rDS(on) 1.8- to 8-V Input |
Original |
Si1867DL 600-mW SC70-6 S-50403--Rev. 07-Mar-05 50403 | |
Si4925DY
Abstract: Si4925DY-T1
|
Original |
Si4925DY Si4925DY-T1 Si4925DY--E3 Si4925DY-T1--E3 08-Apr-05 | |
TB-17
Abstract: Si5499DC
|
Original |
Si5499DC 08-Apr-05 TB-17 | |
Contextual Info: i 4 RELEASED FOR PUBLICATION FREI F U E R V E R O E F F E N T L I C H U N G COPYRIGHT BY or AMP AHF 1996 INC O R P O R A Titu. ED NLUKKUKA i 3 M A T E D WITH: P A S S E N D ZU: , Ì996. A L L E RRIEGCHHTTSE RESERVED. VORBEHALTEN 2 LOC DIST REVISIONS A ENDERUNGEN |
OCR Scan |
E95-52567 07MAR05 17N0V04 | |
SUD08P06-155LContextual Info: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature |
Original |
SUD08P06-155L O-252 SUD08P06-155L--E3 S-50385--Rev. 07-Mar-05 SUD08P06-155L | |
Contextual Info: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S |
Original |
Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 18-Jul-08 | |
50386
Abstract: SI4900DY
|
Original |
Si4900DY Si4900DY-T1--E3 08-Apr-05 50386 | |
50386Contextual Info: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free |
Original |
Si4900DY Si4900DY-T1--E3 S-50386--Rev. 07-Mar-05 50386 | |
B 57 995
Abstract: XT32P XT36C XT38P XT46C XT49M XT49ML XT57C
|
Original |
XT32P XT38P XT49M XT49ML XT46C XT57C XT36C XOSM-57/573/572/571 XOSM-533/532/531 07-Mar-05 B 57 995 XT32P XT36C XT38P XT46C XT49M XT49ML XT57C | |
VHP100Contextual Info: VHP100 Vishay Foil Resistors Bulk Metal Foil Technology Ultra Precision, Zero TCR Resistor FEATURES The TCR of the VHP100 is so small that an additional definition window has been introduced. The window definition requires that the absolute resistance remain within the stated window |
Original |
VHP100 VHP100 60ppn VHP101 10ppm 08-Apr-05 | |
|
|||
GS1085
Abstract: to252ab gs10851
|
Original |
GS1085 O-252 O-220AB O-263AB GS1085CE GS1085CT GS1085CM GS1085 2500/Reel 07-Mar-05 to252ab gs10851 | |
Contextual Info: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S |
Original |
Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 08-Apr-05 | |
Dual Row, SMT Vertical header
Abstract: 6620
|
Original |
UL94-V0 04-DEC-07 26-FEB-07 07-MAR-05 06-OCT-04 Dual Row, SMT Vertical header 6620 | |
Si4840DY
Abstract: Si4840DY-T1
|
Original |
Si4840DY Si4840DY-T1 Si4840DY--E3 Si4840DY-T1--E3 08-Apr-05 | |
595D
Abstract: CECC30801
|
Original |
178mm] 330mm] 535BAAC CECC30801 07-Mar-05 595D | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C |
Original |
UL94-V0 17-NOV-08 04-DEC-07 26-FEB-07 07-MAR-05 06-OCT-04 | |
VHP100Contextual Info: VHP100 Vishay Foil Resistors Bulk Metal Foil Technology Ultra Precision, Zero TCR Resistor FEATURES The TCR of the VHP100 is so small that an additional definition window has been introduced. The window definition requires that the absolute resistance remain within the stated window |
Original |
VHP100 VHP100 60ppn VHP101 10ppm VHP102* VHP103* | |
1417 transistor
Abstract: R631 transistor 1417 81R1
|
Original |
07-Mar-05 1417 transistor R631 transistor 1417 81R1 | |
SUD08P06-155LContextual Info: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature |
Original |
SUD08P06-155L O-252 SUD08P06-155L--E3 08-Apr-05 SUD08P06-155L | |
SI4425DY-E3
Abstract: Si4425DY Si4425DY-T1
|
Original |
Si4425DY Si4425DY-T1 Si4425DY--E3 Si4425DY-T1--E3 18-Jul-08 SI4425DY-E3 |