SI7818DN Search Results

Si7818DN

Abstract: si7818
Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested

Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

73336

Contextual Info: SPICE Device Model Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested Product Is D Avalanche Tested

Si7818DN

Abstract: Si7818DN-T1-E3 Si7818DN-T1-GE3
Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

8229

Abstract: si7818 AN609 Si7818DN
Contextual Info: Si7818DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7818DN

Abstract: Si7818DN-T1-GE3 Si7818DN-T1-E3 si7818
Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si7818DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (TYP.) 20 nC • PWM-optimized TrenchFET power MOSFET • 100 % Rg tested • Avalanche tested

50142

Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested APPLICATIONS

Si7818DN

Abstract: si7818
Contextual Info: SPICE Device Model Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested

si7818

Abstract: Si7818DN
Contextual Info: SPICE Device Model Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Rubycon photoflash

Abstract: 12V, 20A automatic charger LT3751 zener marking hitachi DCT20EFD AC Transformer 50A 100V inductance usim diode sud33n20 NMOS F12 400V to 48V converter
Contextual Info: LT3751 Capacitor Charger Controller with Regulation FEATURES DESCRIPTION n The LT 3751 is a high input voltage capable flyback controller designed to rapidly charge a large capacitor to a user-adjustable target voltage set by the transformer turns ratio and three external resistors. An optional feedback pin

Rubycon photoflash

Abstract: GA3460-BL LT3751FE LT3751 ntb30n20t4g pmos 40a 1000v 750032051 transformer DCT20EFD DCT15EFD-U44S003 PS2801
Contextual Info: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES n n n n n n n n n n DESCRIPTION Charges Any Size Capacitor Low Noise Output in Voltage Regulation Mode Stable Operation Under a No-Load Condition Integrated 2A MOSFET Gate Driver with Rail-to-Rail

DCT20EFD

Abstract: PS07-299 DCT15EFD-U44S003 DCT25EFD-U27S005 750032052 Rubycon photoflash GA3459-AL Midcom LT3751FE si7820
Contextual Info: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES DESCRIPTION n The LT 3751 is a high input voltage capable flyback controller designed to rapidly charge a large capacitor to a user-adjustable high target voltage set by the transformer

Contextual Info: LT3751 High Voltage Capacitor Charger Controller with Regulation FEATURES n n n n n n n n n n DESCRIPTION Charges Any Size Capacitor Low Noise Output in Voltage Regulation Mode Stable Operation Under a No-Load Condition Integrated 2A MOSFET Gate Driver with Rail-to-Rail

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®