07JAN2014 Search Results

Contextual Info: 4 C COPYRIGHT 20 BY - 1 20 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. 2 3 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 C 3.0 2.70 4.03 2.4 18.3 C-C SECTION

Contextual Info: 4 C COPYRIGHT BY - 20 1 20 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. 2 3 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 C 3.7 2.70 4.03 3.5 18.3 8.3 C

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Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D 24.3 D 3.0 3.6 2.70 4.03 3.2 C C 18.3 4.7

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC ES ALL RIGHTS RESERVED. REVISIONS DIST 00 P 20.8 LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ 3.0 D 3.43 D C 3.0 2.4 14.8 C 4.8 C-C 2.40

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT BY - 20 2 3 1 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 00 P LTR A1 DESCRIPTION DATE REVISED PER ECR-14-000140 DWN APVD KH 07JAN2014 GJ D D 24.3 3.0 3.0 2.70 4.03 2.4 C-C SECTION C

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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for

Contextual Info: STAP08DP05 Low voltage 8-bit constant current LED sink driver with output error detection for automotive applications Datasheet - production data Description The STAP08DP05 is a monolithic, low voltage, low current power 8-bit shift register designed for LED panel displays. The STAP08DP05 contains

Contextual Info: ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI Datasheet - production data Features • Memories – 8 Kbytes single voltage Flash Program memory with Read-out protection – In-circuit programming and in-application

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: M24128S-FCU 128-Kbit serial I²C bus EEPROM 4 balls CSP Datasheet - preliminary data Features • Compatible with the 400 kHz I²C protocol • Memory array: – 128 Kbits 16 Kbytes of EEPROM – Page size: 32 bytes • Supply voltage range: – 1.7 V to 5.5 V

Contextual Info: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for

Contextual Info: STAP08DP05 Low voltage 8-bit constant current LED sink driver with output error detection for automotive applications Datasheet - production data Description The STAP08DP05 is a monolithic, low voltage, low current power 8-bit shift register designed for LED panel displays. The STAP08DP05 contains

SCS400J

Contextual Info: SCS400J 0.1A , 90V Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOD-923 Extremely High Switching Speed Low Reverse Leakage Current High Reliability