07FEB2002 Search Results

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary „ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access time: 70, 90ns

ci 94vo

Contextual Info: THIS D R A WI N G IS UNPUBLISHED. RELEASED F OR ALL COPYRI GHT 20 20 PUBLICATIO N RI GHTS REVISIONS RESERVED. FT LTR DE S C R I P T I O N Cl -CAVITY F OR M2.5 -POLARIZATION FIXING KEY R E V I S E D PER ECO-1 1 - 0 0 5 2 9 4 2 8 4 5 4 I -3 o I :Nl i r h AS

J-STD-020B

Abstract: M68AF031A PDIP28
Contextual Info: M68AF031A 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

15h28

Abstract: M68AF031AM M68AF031AL PDIP28 M68AF031
Contextual Info: M68AF031AL M68AF031AM 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 4.5 to 5.5V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.4V TRI-STATE COMMON I/O

Contextual Info: M68AF031A 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ACCESS TIME – 80ns at VCC = 3.0 to 3.6V

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

M29W320DT

Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O R Y RI G H T RELEASED FOR ALL BY PUBLICATION RIGHTS 20 LOC REV I S IONS D IST FT RESERVED. LTR B1 DESCRIPTION DATE REVISED PER ECO-11-005294 29APR11 DWN APVD RK HMR - POLAR I ZAT I ON KEY S L OT - CAV I TY FOR M2 . 5 F I X I NG SCREW

M68AW031A

Abstract: H28A
Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

M68AW031A

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

Contextual Info: M68AF031AL 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

M68AW031A

Contextual Info: M68AW031A 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

114180

Abstract: marking ABE
Contextual Info: ~~ |i| li Min r IINTI'H' i ç u rn IJIM kuL IILN llllLU lL ¿LILHNUNI1 _ Dl ST VEROEFFENTLI CHUNG • ALLE RECHTE VORBEHALTEN A ' 92-52080 NOTES P R EV I S IO N S AENDERUNGEN LTR E1 DATE Kupplungsrmg COUPLING-RING PRE-LOCKED 6 Schnitt Vorraststellung W e r ks to f f ke n nz e ic hn u ng

M68AW031AL

Abstract: M68AW031AM
Contextual Info: M68AW031AL M68AW031AM 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O