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    07AUG2001 Search Results

    07AUG2001 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l


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    m74hc09dip-14so-14 PDF

    Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface


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    m41st84w10ths/100ths PDF

    M48T512V

    Abstract: M48T512Y
    Contextual Info: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra-low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and write


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    m48t512ym48t512v PDF

    M41ST85W

    Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
    Contextual Info: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)


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    m41st85w400khzsoh28500na+5sox2810ths/100thsm4t28-br12sh1m4t32-br12sh1m4t32-br12sh6 PDF

    yw-360-02b

    Abstract: TRANSFORMER EI25 10 XFMR 4 TURN HORIZONTAL POWER COUPLING 822my SS11V top22x TOP243 YIH-HWA BOBBIN ENTERPRISE KME10VB47 TM501
    Contextual Info: Title Engineering Prototype Report for EP-18 10 W, Multiple Output, Isolated Power Supply with TOPSwitch-GX Input Voltage Key Specifications Output Voltages and Current Output Power Efficiency P.I. Device 85-265 VAC 3.3 V, 1.5 A 5 V, 0.9 A 30 V, 0.03 A


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    ep-18op243pepr-1805-dec-2002+12cispr22b/en55022biec60950yw-360-02btransformer ei25 10xfmr 4 turn horizontal power coupling822myss11vtop22xtop243yih-hwa bobbin enterprisekme10vb47tm501 PDF

    Contextual Info: 7 8 TH I S DRAW IN G I S U N P U B L I S H E D . VFRTRAIII IFHF IJNVFRnFFFFNTI I F HTF 7F I F HNIJNfi C C O P Y R I G H T 2 00 0 BY TYCO E L E C T R O N IC S -+ftH_ f n F T " V P R n C F F F Ñ T r r r T O N f T - - - C O R P O R A T IO N . *LL ^ H T A


    OCR Scan
    03may200415fpb200607may2010 PDF

    KDS 32kHZ crystal

    Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
    Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface


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    m41st84w10ths/100thskds 32khz crystalquartz crystal kds 70+3an1572an1012ai005 PDF

    TECHNICAL SPECIFICATION DATA SHEET GOLD 705

    Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
    Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■


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    m41st85wsoh28technical specification data sheet gold 705m4t28-br12sh1+5m4t32-br12sh1m4t32-br12sh6an93424jannvram PDF

    AN1012

    Abstract: M41ST84W block diagram of energy saving ABE smd
    Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage


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    m41st84w10ths/100thsan1012block diagram of energy saving+1abe smd PDF

    M48T512Y

    Abstract: STMicroelectronics 1N58 5747
    Contextual Info: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours,


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    m48t512ym48t512vstmicroelectronics1n58+15747 PDF

    Contextual Info: 47,04 38.03 1.385X24=33.24 D —(—(— 7 7 - \^ ^ 0- 0- 0- 0- 0-0- 0-0- 0- 0- ^ ^ / / - I 5 - I 8.54±0.25 CD 1 1.385TYP. 12 25 24 10 23 9 22 8 21 7 20 6 19 5 18 4 17 3 16 2 15 1.9 V- 11 -4 0 UNC A 47.04 iO.25 RECOMMENDED P. C. B LAYOUT (T = 1 .0 0 m m )


    OCR Scan
    385x24385typ07-aug PDF

    JESD97

    Abstract: M74HC09 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14
    Contextual Info: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ■ Low power dissipation: ICC = 1µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) DIP-14 ■ Balanced propagation delays: tPLH ≅ tPHL


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    m74hc09dip-14so-14jesd97+4m74hc09b1rm74hc09m1rm74hc09rm13trtssop14 PDF

    AMP PBT GF20 connector

    Abstract: ejot torque
    Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2000 RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN. Tyco Electronics AMP GmbH 6 2001- - 5 4 3 2 LOC MATED WITH: PASSEND ZU:


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    21pos07may201007sep2011egaut00498+616may201226jul200107aug200121polamp pbt gf20 connectorejot torque PDF

    M48T512V

    Abstract: M48T512Y 03-DEC-1999
    Contextual Info: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and WRITE


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    m48t512ym48t512v03-dec-1999 PDF

    M4T32-BR12SH6

    Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM ■ 400 kHz I2C serial interface


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    m41st85wsox28soh28m4t32-br12sh6 PDF

    Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM 400 kHz I2C serial interface


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    m41st85wsoh28sox28 PDF

    Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC DIST R E V ISIONS AD 00 RESERVED. LTR DESCRIPTION R E L E A S E D PER 0 G 3 C - 0 0 7 8 - 0 3 0G 3 C - 0 7 5 6 - 0 4 R E V I S E D PER ECO - 0 9 - 0 2 5 6 9 9


    OCR Scan
    copyright203c-0756-04eco-0954jjm+2-i4452973imar2000 PDF

    Contextual Info: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours,


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    m48t512ym48t512v PDF

    JESD97

    Abstract: M74HC390 M74HC390B1R M74HC390RM13TR
    Contextual Info: M74HC390 Dual decade counter Features • HIgh Speed: fMAX = 79MHz Typ. at VCC = 6V ■ Low power dissipation: ICC = 4µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) ■ Balanced propagation delays: tPLH ≅ tPHL ■ Wide operating voltage range:


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    m74hc39079mhzdip-16so-16+3jesd97m74hc390b1rm74hc390rm13tr PDF

    Contextual Info: M74HC390 Dual decade counter Features • HIgh Speed: fMAX = 79MHz Typ. at VCC = 6V ■ Low power dissipation: ICC = 4µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) ) s t( c u d DIP-16 ■ Balanced propagation delays: tPLH ≅ tPHL


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    m74hc39079mhzdip-16so-16 PDF