06SEP2013 Search Results
06SEP2013 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C REVISIONS ALL RIGHTS RESERVED. P H2 APVD KJK 06SEP2013 RP D 5,80 # 0,20 1 SCALE 3,1 0,2 PART NUMBER BOX PACKAGING 0,5 0,1 TYP ALL CONTACTS 0,4 K M M TYP 1,27 TYP A-A n-1 x1,27 PART NUMBER REEL PACKAGING NR OF POS "n" "A" MAX |
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06SEP2013 | |
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C 20 RELEASED FOR PUBLICATION TYP 1,27 TYP DESCRIPTION LTR F3 DATE PACKAGING QTY CHANGE FOR 4 POS. CONNECTOR SCALE ALL CONTACTS 0,4 K M DWN APVD KJK 06SEP2013 PART NUMBER REEL PACKAGING NR. OF POS "n" "A" MAX 338070-4 4 9,7 338070-6 |
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03-JUN-96 | |
WLCSP49Contextual Info: STM32F401xB STM32F401xC ARM Cortex-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 10 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator™ allowing 0-wait state execution |
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STM32F401xB STM32F401xC 256KB Flash/64KB 32-bit 4-to-26 DocID024738 WLCSP49 | |
Contextual Info: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring |
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WTX1013 SC-89 06-Sep-2013 SC-89 50BSC | |
Contextual Info: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7640-GA 2N7640 03E-47 72E-28 68E-10 72E-09 00E-02 2N7640-GA | |
transistor bf 175Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7638-GA 2N7638 73E-46 50E-28 77E-10 23E-10 20E-02 2N7638-GA transistor bf 175 | |
Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
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2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA | |
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
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2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA | |
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC TE CONNECTIVITY REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR DESCRIPTION DATE DWN APVD J3 ADDED NEW DASH -23. 06DEC2010 IL SZ J4 ADDED NEW DASH NUMBER 2-4 12AUG2012 |
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06DEC2010 12AUG2012 ECR-13-014088 06SEP2013 22MAR2005 | |
WLCSP49Contextual Info: STM32F401xB STM32F401xC ARM Cortex®-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 11 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator allowing 0-wait state execution |
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STM32F401xB STM32F401xC 256KB Flash/64KB 32-bit 4-to-26 DocID024738 WLCSP49 | |
Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
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2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA | |
Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7636-GA 2N7636 22E-47 91E-27 37E-10 36E-10 50E-02 2N7636-GA | |
Contextual Info: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features • 250 °C maximum operating temperature Temperature independent switching performance |
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GA10JT065-CAL GA10JT065 73E-46 50E-28 77E-10 23E-10 20E-02 GA10JT065-CAL | |
Contextual Info: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7640-GA 2N7640 03E-47 72E-28 68E-10 72E-09 00E-02 2N7640-GA | |
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Contextual Info: STEVAL-VNH5019A Motor driver evaluation board based on VNH5019A Data brief Description STEVAL-VNH5019A offers dedicated power stage and controls suitable for electric DC motor driving. This evaluation board comes pre-assembled with VNH5019A H-bridge belonging to the VNH Motor Driver series based |
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STEVAL-VNH5019A VNH5019A STEVAL-VNH5019A VNH5019A VNH5019A-E DocID025030 | |
Contextual Info: STEVAL-VNH5050A Motor driver evaluation board based on VNH5050A Data brief Description STEVAL-VNH5050A offers dedicated power stage and controls suitable for electric DC motor driving. This evaluation board comes pre-assembled with VNH5050A H-bridge belonging to the VNH Motor Driver series based |
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STEVAL-VNH5050A VNH5050A STEVAL-VNH5050A VNH5050A VNH5050A-E DocID025033 | |
SEF201BContextual Info: SEF201B ~ SEF207B Voltage 50 V ~ 1000 V 2.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SMB Ideal for surface mount applications Easy pick and place |
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SEF201B SEF207B 06-Sep-2013 SEF201B | |
Contextual Info: SPA2040L PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER REVERSE VOLTAGE - 40 Volts FORWARD CURRENT - 20 Amperes FEATURES D2PAK ●Metal of silicon rectifier , majority carrier conduction ●Guard ring for transient protection ●Low power loss,high efficiency |
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SPA2040L 300US 06-Sep2013 | |
Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7636-GA 2N7636 22E-47 91E-27 37E-10 36E-10 50E-02 2N7636-GA | |
Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
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2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA | |
Contextual Info: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features • 250 °C maximum operating temperature Temperature independent switching performance |
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GA05JT065-CAL GA05JT065 22E-47 91E-27 37E-10 36E-10 50E-02 GA05JT065-CAL | |
Contextual Info: STM32F401xB STM32F401xC ARM Cortex-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 10 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator™ allowing 0-wait state execution |
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STM32F401xB STM32F401xC 256KB Flash/64KB 32-bit 4-to-26 DocID024738 | |
Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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2N7638-GA 2N7638 73E-46 50E-28 77E-10 23E-10 20E-02 2N7638-GA | |
Contextual Info: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
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2N7639-GA 2N7639-GA 03E-47 72E-28 68E-10 72E-09 00E-02 |