06NOV2007 Search Results

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Top View LEDs 67-21/B3C-BN1Q2N/2T Features ˙P-LCC-2 package. ˙White package. ˙Optical indicator. ˙Colorless clear window. ˙Wide viewing angle. ˙Suitable for vapor-phase reflow, Infrared reflow and wave solder processes.

w55nm60n

Abstract: STW55NM60N w55nm60
Contextual Info: STW55NM60N N-channel 600 V - 0.047 Ω - 51 A - TO-247 second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STW55NM60N 650 V < 0.060 Ω 51 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

Contextual Info: 2 £L THIS DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC 00 AD RESERVED. R E V I SIONS DIST LTR DESCRIPTION 07 Al A2 DATE DWN APVD EC OS I 2 - 0 4 0 9 - 0 4 20AUG2004 R E V PE R EC OS I 2 - 0 3 2 2 - 0 5

Contextual Info: M41T56 Serial real-time clock RTC with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance (12.5 pF) providing exceptional oscillator stability and high crystal series

STP4N150

Abstract: 4N150 STFW4N150 STW4N150 W4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is

RJ11 4P4C

Abstract: rj11 4p to 3,5 jack 6p6c rj11 RJ11 6P6C RJ11 SPEC
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT REVISIONS DIST DW LTR DESCRIPTION A2 DATE REVISED PER ECO-11-005140 DWN 31MAR11 APVD RK HMR TE LOGO 15.9 3.5 1.5 HOLD DOWN 3.00 -É> 0.10 w i LO o I 00 2 PLC _

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T - BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S D E S C R IP T IO N A' 14.22 2 0 .0 6 [.790]

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

SM340A

Abstract: SM3100A SM350A SM320A
Contextual Info: SM320A THRU SM3100A VOLTAGE 20V ~ 100V Elektronische Bauelemente 3.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA FEATURES . RoHS Compliant Product . Ideal for surface mount applications

4n150

Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
Contextual Info: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω

M48Z58

Abstract: M48Z58Y SOH28
Contextual Info: M48Z58 M48Z58Y 5V, 64Kbit 8Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1

DX48BT2

Abstract: DX48BT
Contextual Info: Work Play Support About Intel Products Change Location Technology Communities Downloads Reseller Support Home Intel Desktop Board DX48BT2 home Warranty information Spare parts Desktop Board support information Intel® Desktop Board DX48BT2 What's in the box

Contextual Info: M41T56 Serial real-time clock with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional oscillator stability and high crystal series

STP4N150

Abstract: W4N150 4N150 STFW4N150 STW4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 2 3 1 TO-220

STP4N150

Contextual Info: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 very high PowerMESH Power MOSFET Features VDSS RDS on Max (@Tjmax) Type ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

Contextual Info: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

M48Z58

Abstract: M48Z58Y SOH28 ST E3 0560 1N5817
Contextual Info: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra-low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28

Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 3 1 TO-220 2

STW55NM60N

Abstract: JESD97
Contextual Info: STW55NM60N N-channel 600 V, 0.047 Ω, 51 A, MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW55NM60N 650 V < 0.060 Ω 51 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3

M41T56

Abstract: STMicroelectronics
Contextual Info: M41T56 Serial real-time clock RTC with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance (12.5 pF) providing exceptional oscillator stability and high crystal series

Contextual Info: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Top View LEDs 67-21/B3C-BN1Q2N/2T Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow

M48Z58

Abstract: M48Z58Y SOH28 PM-DIP28
Contextual Info: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

STMicroelectronics 8-pin SOIC power

Abstract: crystal 32kHZ M41T56
Contextual Info: M41T56 Serial real-time clock with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional oscillator stability and high crystal series