06375 Search Results

DSP group

Abstract: echo sound processors telephone speech processor D6375A D6375A-11 95051
Contextual Info: D6375A Voice/Telephony IC wjth TRUESPEECH Compression M IC SPEAKER 1 Sp e ak er 1 1 Ph o n e C ODEC 1 O p tio n a l — Éilllil» 06375A « S Ö TEL I ,1 1 V O IC E PROM PT ROM (O p tion a l) S P p * o e « $ s o f HOST C ontroller i l l i i y i l l

Contextual Info: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 35 | Germin KrG | Special terminals SAKG | 95 mm² General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 0637520000 SAKG 40/35 I

LINDNER fuses

Abstract: diazed fuse d10 LINDNER Wickmann USA Electrical Fuse 3.6 KV, 315A Neozed weidmuller fuse sak 0456360000 M3X22 IEC 947-7-1 052766-000
Contextual Info: SAK-series 124 SAK-series Weidmüller terminal - SAK-series- are proved in millions of applications for more than 50 years. TS 32 TS 35 Thermosetting plastic or Thermoplastic Terminal of thermosetting plastic are normally used in applications where high continuous service temperature and high

NTC Thermistor 100 KOhm

Abstract: ZCS buck converter socket A 462 motherboard diagram ADP3209CJCPZ-RL
Contextual Info: 5-Bit, Programmable, Single-Phase, Synchronous Buck Controller ADP3209C FEATURES GENERAL DESCRIPTION Single-chip solution Fully compatible with the Intel GMCH chipset voltage regulator specifications Integrated MOSFET drivers Input Voltage Range of 3.3 V to 22 V

Contextual Info: MECXKaUPConv X-band to Ka-band UP-Converter Main Features • RF Output Frequency: 30 -31 GHz • LO Input Frequency: 22 GHz • IF Input Frequency: 8 -9 GHz • More than 11 dB Conversion Gain • 29 dBm OTOI • 30 dBc LO Isolation Product Description • Bias: Vd = 2.8 V, Idq = 320 mA,

Contextual Info: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.6 – 10.4 GHz full performances Frequency Range  13W Output Power @ Pin 24 dBm  40% PAE @ Pin 24 dBm  24 dB Linear Gain  Bias: Vd = 25V, Id = 480 mA,

Contextual Info: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm

Contextual Info: INTEGRATED CIRCUITS DAT TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July 1999 Aug 30 NXP Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT FEATURES GENERAL DESCRIPTION • No external components

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

silec

Abstract: JANCO transistor SMD DK qa silec rm Carter Transistor Corporation 885011 wien CM02-D 271924
Contextual Info: SALES OFFICES PSD SALES OFFICES Southeast Regional Sales Office General Instrument Corporation 6855 Jimmy Carter Blvd. Norcross, GA 30071 Tel: 404 446-1265 Fax: (404) 446-1286 Central Regional Sales Office General Instrument Corporation 85 W. Algonquin Rd. Suite 300

TDA7073A

Abstract: TDA7073AT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July File under Integrated Circuits, IC01 1999 Aug 30 Philips Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT

Contextual Info: MECWideX X-Ku-Band 0.5 Watt Wideband Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.0 – 14.0 GHz full performance Frequency Range  Small Signal Gain > 18 dB  Input Return Loss > 10 dB  P1dB > 27 dBm  Psat > 29 dBm  PAE > 35 %

0185220000

Abstract: 0179900000 0180700000
Contextual Info: Cable Lug 32/35 mm DIN-Rail Terminals SAKG 70 II G SAKG 40 I SAKG 40 II SAKG 40 II G 0150420000 0286820000 0170520000 0637820000 0185220000 0637720000 40/90/55.5 1.57/3.54/2.19 46/90/55 (1.81/3.54/2.17) – 40/90/55.5 (1.57/3.54/2.19) 46/90/55 (1.81/3.54/2.17)

TDA7073A

Abstract: TDA7073AT tda7073
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July 1999 Aug 30 NXP Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT FEATURES GENERAL DESCRIPTION • No external components

Contextual Info: MEC25XDRA X-Band 0.5 Watt Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.9– 11.0 GHz full performance Frequency Range  Small Signal Gain > 21 dB  Input Output RL > 12 dB  P1dB > 27 dBm  Bias: Vd = 6V, Id = 190mA, Vg = -0.5 V Typ.

T2D 4N DIODE

Abstract: resistor HMR 5W diode code GW 17
Contextual Info: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories

Contextual Info: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 35 | Germin KrG | Special terminals SAKG | 95 mm² General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 0637820000 SAKG 40/35 II/GW

qm431

Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Contextual Info: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N

Contextual Info: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.

Contextual Info: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm

Contextual Info: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.5 – 10.2 GHz full performances Frequency Range  27W Output Power @ Pin 27 dBm  36% PAE @ Pin 27 dBm  24 dB Small Signal Gain  Bias: Vd = 30V, Id = 1A, Vg = -2.85V

Contextual Info: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency

Contextual Info: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.

siba 90 058 05 500A

Abstract: LINDNER fuses SAKC10 SIBA FUSE FF varistor 05 k 575 0183360000 indicator fuse terminal SAKS1 SAK4 SL TERMINAL 100 0667520000 SAKR-35
Contextual Info: Modular feed-through terminals 2.5 mm2 SAKD 2.5/35 2.5 mm2 SAK 2.5 TS 35 / PA TS 35 / PA A When using ATEX certified components in hazardous area applications the installation instructions and the rated data for accessories in the technical appendix must be considered.