061004 Search Results

lem hxs 50 np

Abstract: ac to dc 5V dc supply 50-NP 061004
Contextual Info: IPN = 12.5 - 25 - 50 A Current Transducer HXS 50-NP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

G2PW2V060

Abstract: G2PW2V560 G2PW3V345 G2PW5V030 pisces
Contextual Info: PISCES II Series 48V or 24V Input 1.0V, 1.2V, 1.5V, 1.8V, 2.0V, 2.5VDC, 60A Output 3.3V, 45A; 5.0V, 30A Output The Pisces II Series is the industry's first 60A quarter brick in Galaxy Power's CoolConverter line of high-efficiency DC/DC converters. The open-frame Pisces II is available with an optional

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-22 500 to 2500 MHz Features • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

max7660

Contextual Info: MONOLITHIC AMPLIFIERS HIGH DIRECTIVITY 50Ω 0.5 to 5.9 GHz NEW! VNA All specifications at 25°C u MODEL NO. FREQ. GHz DC VOLTS (V) fL - fU GAIN, dB Typical MAXIMUM POWER (dBm) over frequency, GHz 0.5 1.0 1.5 2.0 2.5 Min. at 2 GHz Output (1 dB Comp.) Typ.

50-NP

Contextual Info: Current Transducer HXS 50-NP/SP2 IPN = 12.5 - 25 - 50 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

lem hxs 50 np

Abstract: HXS20-NP 10-NP
Contextual Info: Current Transducer HXS 10-NP/SP3 IPN = 10 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). DUAL PHASE All Data are given with a R L = 10 kΩ

PL-077

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-23 500 to 2500 MHz Features • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

ed98

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-28 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

VNA-25

Abstract: vna25
Contextual Info: High Directivity VNA-25+ VNA-25 Monolithic Amplifier 50Ω 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-22 500 to 2500 MHz Features • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: 100 Watts WR-102 RF Load Up To 11 GHz TECHNICAL DATA SHEET PE6825 100 Watts WR-102 RF Load Up To 11 GHz Configuration Connector WR-102 Heat Sink Aluminum Electrical Specifications Frequency Range, GHz Impedance, Ohms Maximum VSWR Maximum Input Power, Watts

RCA-CA3127

Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Contextual Info: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz

hxs 20-np/sp30

Abstract: HXS 20-NP
Contextual Info: Current Transducer HXS 20-NP/SP30 IPN = 5 - 10 - 20 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-21 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: IPN = 5 - 10 - 20 A Current Transducer HXS 20-NP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-21 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 20 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-28 500 to 2500 MHz Features • • • • • • • • • 3V & 5V operation no external biasing circuit required internal DC blocking at RF input and output high directivity, 18 dB typ. wide bandwidth, 500 to 2500 MHz

Contextual Info: Current Transducer HXS 20-NP/SP2 IPN = 5 - 10 - 20 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). All Data are given with a R L = 10 kΩ

WR102

Abstract: PE6825 061004
Contextual Info: BACK VIEW PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX <949) 261-7451 WEB ADDRESS: w w w .paste rna ckxom E-MAIL ADDRESS: sates@ pasternack.com PASTERNACK ENTERPRISES COAXIAL & FIBER OPTICS ESTABLISHED 1972 S P E C IF IC A T IO N S

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT —»— RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC DIST 00 HC LTR DESCRIPTION REV PER 0S14 - 0 2 2 2 - 0 4 MOUNTING SURFACE OWN DATE 06-10-04 APVD JDP JGH .0 0 5 /.0 1 0 X 45'

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features: