060P2 Search Results
060P2 Price and Stock
Acme Electric Corporation 62060-P2S02PWR XFMR TOROIDAL 25VA CHAS MT |
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62060-P2S02 | Bulk | 1,788 | 1 |
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Rochester Electronics LLC ISL9R3060P2DIODE AVALANCHE 600V 30A TO2202 |
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ISL9R3060P2 | Bulk | 1,760 | 175 |
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JRH ELECTRONICS 750-060-P24AT11B12-68CONNECTOR BACKSHELL |
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750-060-P24AT11B12-68 | Bulk | 109 | 1 |
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Power Integrations 1SC2060P2A0-17IC GATE DRVR HI/LOW SIDE MODULE |
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1SC2060P2A0-17 | Box | 23 | 1 |
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1SC2060P2A0-17 | Bulk | 20 Weeks | 20 |
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1SC2060P2A0-17 | Bulk | 21 | 1 |
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1SC2060P2A0-17 | 1 |
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1SC2060P2A0-17 | 16 Weeks | 20 |
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Honeywell Sensing and Control 060-P271-01-01"AL111EP,1E,2N,6A,9X,15A MODEL |
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060-P271-01-01 | Bulk | 1 | 1 |
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060-P271-01-01 |
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| 060-P271-01-01 |
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060P2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
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CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 | |
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Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
Original |
CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 | |
CGH35060Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for |
Original |
CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 |