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    060P2 Search Results

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    Acme Electric Corporation 62060-P2S02

    PWR XFMR TOROIDAL 25VA CHAS MT
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    DigiKey 62060-P2S02 Bulk 1,788 1
    • 1 $20.21
    • 10 $20.21
    • 100 $19.14
    • 1000 $18.65
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    Rochester Electronics LLC ISL9R3060P2

    DIODE AVALANCHE 600V 30A TO2202
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    DigiKey ISL9R3060P2 Bulk 1,760 175
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    JRH ELECTRONICS 750-060-P24AT11B12-68

    CONNECTOR BACKSHELL
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    DigiKey 750-060-P24AT11B12-68 Bulk 109 1
    • 1 $9599.97
    • 10 $9407.97
    • 100 $9035.41
    • 1000 $8854.71
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    Power Integrations 1SC2060P2A0-17

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SC2060P2A0-17 Box 23 1
    • 1 $152.88
    • 10 $134.53
    • 100 $91.04
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    Avnet Americas 1SC2060P2A0-17 Bulk 20 Weeks 20
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    Newark 1SC2060P2A0-17 Bulk 21 1
    • 1 $166.92
    • 10 $146.89
    • 100 $99.40
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    TME 1SC2060P2A0-17 1
    • 1 $142.79
    • 10 $130.14
    • 100 $104.61
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    EBV Elektronik 1SC2060P2A0-17 16 Weeks 20
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    Honeywell Sensing and Control 060-P271-01-01

    "AL111EP,1E,2N,6A,9X,15A MODEL
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    DigiKey 060-P271-01-01 Bulk 1 1
    • 1 $3441.79
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    Mouser Electronics () 060-P271-01-01
    • 1 $3107.95
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    060-P271-01-01
    • 1 $3107.95
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    060P2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    CGH35060

    Contextual Info: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF