0600 Search Results

TL 2272 M

Contextual Info: <g> M O T O R O L A Military 10507 Triple 2 Input Exclu sive “O R ’VExclusive “NOR” Gate ELEC TRICA LLY T E STE D PER: MIL-M-38510/06005 M The 10507 is a triple 2 input exclusive OR/NOR gate. P ll/ l/ ll • 40 m W Max/Gate No Load • tpcj = 2.8 ns typ

561-08025

Contextual Info: Nylon Screw Insulators 561-10SC004003, 561-04004, 561-04006, 561-04012, 561-06004, 561-06012, 561-06018, 561-06025, 561-06050, 561-08012, 561-08025, 561-08037, 561-08050, 561-10014, 561-10018, 561-10025, 561-10037, 561-10075, 561-25012, 561-25018, 561-25025, 561-25037, 561-25050,

CYG1603

Abstract: CYG1602 CYG602
Contextual Info: =欢迎光临本公司网站= 页码，1/3 CYG1600/0600系列中高温压力变送器/传感器 产品综述: 普通的压阻式压力传感器其敏感测控惠斯顿全桥的四个力敏电阻是用集成电路工艺制造的，电阻间用PN结 相互隔离。由于受到PN结耐温限制，最高使用温度仅125℃，而实际上由于PN结反向漏电流随温度指数上升关

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RH320240T-004-IY3 RC2002LRS-LWA-H

Contextual Info: MN101C42 Series MN101C425 Type MN101C427 MN101CP427 Mask ROM Internal ROM type EPROM ROM byte 8K 16K RAM (byte) 0.25K 0.5K QFP044-P-1010F, SDIP042-P-0600C, TQFP048-P-0707B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: HRW0702A Silicon Schottky Barrier Diode for Rectifying REJ03G0159-0600Z Previous: ADE-208-109E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: Data Sheet HAT1111C R07DS1177EJ0700 Previous: REJ03G0446-0600 Rev.7.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. DF REVISIONS DIST AO LTR DESCRIPTION RELEASED PER 0600-6783-97 DATE DUN APVD 10-97 CT JW RECEPTACLE SHELL MAT'L: ALUMINUM ALLOY PER QQ-A-591

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. DF REVISIONS DIST AO LTR DESCRIPTION RELEASED PER 0600-7378-98 DATE DUN APVD 7-98 CT DB D D PLUG SHELL M AT 'L : ALUMINUM ALLOY FINISH: CADMIUM PLATED; YELLOW CHROMATE

Contextual Info: o CO -C±0.38- o -B±0.25- CO s -A±0.25- Shell: Steel, tin plated -2.77 Typ. CO o s Material and Finish 2.84 10 lO 0600000000000 CN o 03 oooooooooooo CM o +1 LO LO 2.77 Typ. n o o o o o o o ' o o o o u o o o o o o o o o o ©- 2-03.05 r- o Insulator: PBT thermoplastic

chips 69000

Abstract: FR05 69000
Contextual Info: &+,36 352'8&7$/ 57 Chips and Technologies, Inc. 2950 Zanker Road San Jose, CA 95134 (408 434-0600 PA337/2-98 Errata for 69000 HiQVideo with Embedded Memory ES1.2 Silicon The anomalies listed below apply to the 69000 ES1.2 silicon revision. This is a preliminary list, which only contains

HCPL-0601

Abstract: HCPL0601
Contextual Info: HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS HCPL-0600 HCPL-0601 DESCRIPTION The HCPL-0600/0601optocouplers consist of a 870 nm AlGaAS LED, optically coupled to a very high speed integrated photodetector logic gate with a strobable output. The devices are housed in a compact small-outline package. This output features an

HVM187WK

Contextual Info: HVM187WK Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0116-0600Z Previous: ADE-208-056E Rev.6.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

H5N2001LD

Abstract: H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C
Contextual Info: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A Package name: LDPAK (L )

KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Contextual Info: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9

10810-019

Abstract: MIL-M-24325
Contextual Info: 4 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. DF REVISIONS DIST AO LTR DESCRIPTION RELEASED PER 0600-7296-98 DATE DUN APVD 5-98 CT JW D D -H- 2 . 00 + . 015 [50.8+0.38] - -1 . 6 1 2 [40.94]

35505-6000-B0MGF

Abstract: 35505-6000-B0M
Contextual Info: JNPS-0600 C, PD-0054 製品仕様書 Product Specification ３Ｍ 印 Power Clamp ﾜｲﾔｰﾏｳﾝﾄ ｿｹｯﾄ 35505-6XX0-X0X GF 3M Power Clamp Wire Mount Socket 35505-6XX0-X0X GF This document is a modified version of the original JNPS-0600C which is

64F3062f25

Abstract: H8/3062 64F3064f25 pin diagram of ic 741 diagram pc board ta 306-2 REJ09B0215-0600 H8/3062f 3062 MCU EF20 L2 h8 family
Contextual Info: REJ09B0215-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/3062, H8/3062B Group Hardware Manual

BB502C

Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Contextual Info: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

LGA144

Abstract: XORB LGA-144 4435* mos A18E SR 2370R ic 555 block diagram 1041 p26 HD64F2378RVFQ marking 1052
Contextual Info: REJ09B0109-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2378, H8S/2378R Group Hardware Manual

6 pin 2D 1002

Abstract: T3 SL 100B 555 timer 38 khz pin diagram of bf 494 transistor REJ10B0161-0100 block diagram for RF transmitter AND RECEIVER tray qfp 14x14 1.4 transistor x1 pv 25 H738 p-qfp100-14x14-0.50
Contextual Info: REJ09B0145-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 8 H8/3847R Group, H8/3847S Group,

6 pin 2D 1002

Abstract: pin diagram of bf 494 transistor tray qfp 14x14 1.4 1117 3.3 3 pin diagram 2K variable resistor 8 pin 4v power supply converter block diagram for RF transmitter AND RECEIVER pin DIAGRAM OF ROM tqfp 14x14 tray REJ10B0161-0100
Contextual Info: REJ09B0144-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 8 H8/3827R Group, H8/3827S Group,

H13106152

Abstract: SHR-06V-S-B 51021-0600 5 PIN molex ul1571 ul1571 wire CONN
Contextual Info: H13106152 Molex # 51021-0600 “Conn 2” JST SHR-06V-S-B “Conn 1” 1 1 6 6 6.0[152] ± .25 [6,4] Pin Assignments Conn 1 Conn 2 Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 2 Pin 6 Pin 4 Pin 3 Pin 5 Pin 1 Pin 1 JST SHR-06V-S-B “Conn 1” Pin 1 Molex # 51021-0600

L006

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DI ST DF FO LTR DESCRIPTION REV PER 0600-4137-95 DATE DUN APVD 10-10-95 TT DM •5. 380+ .01 2 e D .01 0 L © D NUMBERS AND LINES INDICATING EVERY FIVE