Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    05NG Search Results

    SF Impression Pixel

    05NG Price and Stock

    Select Manufacturer

    Honeywell Sensing and Control DC005NGR5

    Pressure Sensor 1V to 6V 0inH2O to 5inH2O Gage 4-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics DC005NGR5 20
    • 1 $3.59
    • 10 $3.52
    • 100 $3.31
    • 1000 $3.18
    • 10000 $3.18
    Buy Now

    Amphenol PCTEL MUF4505NGP

    450-470 5DB NGP CHR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics MUF4505NGP 20
    • 1 $33.16
    • 10 $30.78
    • 100 $29.14
    • 1000 $28.96
    • 10000 $28.96
    Buy Now
    Mouser Electronics MUF4505NGP 44
    • 1 $50.85
    • 10 $43.91
    • 100 $38.80
    • 1000 $38.80
    • 10000 $38.80
    Buy Now
    RS MUF4505NGP Bulk 7 Weeks 25
    • 1 -
    • 10 -
    • 100 $121.65
    • 1000 $111.92
    • 10000 $111.92
    Get Quote
    Richardson RFPD MUF4505NGP 25
    • 1 -
    • 10 -
    • 100 $96.11
    • 1000 $96.11
    • 10000 $96.11
    Buy Now

    Amphenol PCTEL MUF4505NGPS

    450-470 5DB NGP W/SPR CHR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics MUF4505NGPS 15
    • 1 $45.03
    • 10 $41.80
    • 100 $39.58
    • 1000 $39.33
    • 10000 $39.33
    Buy Now
    Mouser Electronics MUF4505NGPS 22
    • 1 $67.52
    • 10 $59.28
    • 100 $53.77
    • 1000 $53.77
    • 10000 $53.77
    Buy Now
    RS MUF4505NGPS Bulk 11 Weeks 25
    • 1 -
    • 10 -
    • 100 $165.22
    • 1000 $152.00
    • 10000 $152.00
    Get Quote
    Richardson RFPD MUF4505NGPS 25
    • 1 -
    • 10 -
    • 100 $130.53
    • 1000 $130.53
    • 10000 $130.53
    Buy Now

    Honeywell Sensing and Control HSCDRRN005NG7A3

    TRUSTABILITY PRESSURE SENSOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics HSCDRRN005NG7A3
    • 1 -
    • 10 -
    • 100 $43.10
    • 1000 $43.10
    • 10000 $43.10
    Buy Now
    TME HSCDRRN005NG7A3 100
    • 1 -
    • 10 -
    • 100 $93.80
    • 1000 $93.80
    • 10000 $93.80
    Get Quote
    FDH Electronics HSCDRRN005NG7A3 1
    • 1 $109.12
    • 10 $90.93
    • 100 $67.00
    • 1000 $61.60
    • 10000 $61.60
    Get Quote

    Honeywell Sensing and Control HSCSGNN005NGAA5

    TRUSTABILITY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics HSCSGNN005NGAA5
    • 1 -
    • 10 -
    • 100 $65.24
    • 1000 $65.24
    • 10000 $65.24
    Buy Now
    Mouser Electronics HSCSGNN005NGAA5
    • 1 -
    • 10 -
    • 100 $71.33
    • 1000 $71.33
    • 10000 $71.33
    Get Quote
    Newark HSCSGNN005NGAA5 Bulk 100
    • 1 -
    • 10 -
    • 100 $78.74
    • 1000 $78.74
    • 10000 $78.74
    Buy Now
    RS HSCSGNN005NGAA5 Bulk 12 Weeks 100
    • 1 -
    • 10 -
    • 100 $85.32
    • 1000 $85.32
    • 10000 $85.32
    Get Quote
    TME HSCSGNN005NGAA5 100
    • 1 -
    • 10 -
    • 100 $78.22
    • 1000 $78.22
    • 10000 $78.22
    Get Quote
    FDH Electronics HSCSGNN005NGAA5 1
    • 1 $160.13
    • 10 $133.44
    • 100 $98.33
    • 1000 $90.39
    • 10000 $90.39
    Get Quote

    05NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    369D

    Abstract: NTD5805NG NTD5805NT4G W473 5805N
    Contextual Info: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    ntd5805nntd5805n/d369dntd5805ng+3ntd5805nt4gw4735805n PDF

    NVD5805NT4G

    Abstract: NVD5805N
    Contextual Info: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    ntd5805nnvd5805naec-q101ntd5805n/d+1nvd5805nt4g PDF

    369D

    Abstract: NTD5805NG NTD5805NT4G CCFL backlight driver 05ng
    Contextual Info: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    ntd5805nntd5805n/d369dntd5805ng+3ntd5805nt4gccfl backlight driver05ng PDF

    4805ng

    Abstract: 369D NTD4805N
    Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    ntd4805nntd4805n/d4805ng369d PDF

    369D

    Abstract: NTD4805N mosfet K 2865
    Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


    Original
    ntd4805nntd4805n/d369dmosfet k 2865 PDF

    369D

    Abstract: NTD4905NT4G ntd4905 S2340 05ng
    Contextual Info: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4905nntd4905n/d369dntd4905nt4g+3ntd4905s234005ng PDF

    369D

    Abstract: NTD4805N NTD4805NT4G
    Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4805nntd4805n/d369dntd4805nt4g PDF

    369AA

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    ntd4805nnvd4805naec-q101ntd4805/d+1369aa PDF

    NVD5805N

    Contextual Info: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    ntd5805nnvd5805nntd5805n/d PDF

    4805N

    Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4805nntd4805n/d4805n PDF

    Contextual Info: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4905nntd4905n/d PDF

    369D

    Abstract: NTD4905NT4G
    Contextual Info: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4905nntd4905n/d369dntd4905nt4g PDF

    5805N

    Abstract: 369D NTD5805NG NTD5805NT4G
    Contextual Info: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    ntd5805nntd5805n/d5805n369d+2ntd5805ngntd5805nt4g PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    ntd4805nnvd4805naec-q101ntd4805n/d PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    ntd4805nnvd4805nntd4805n/d PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    ntd4805nnvd4805nntd4805n/d PDF

    NTD5805NT4G

    Abstract: NVD5805N
    Contextual Info: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    ntd5805nnvd5805nntd5805n/dntd5805nt4g PDF

    05NG

    Abstract: 369D NTD4805N NTD4805NT4G 836 DIODE
    Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4805nntd4805n/d05ng369d+2ntd4805nt4g836 diode PDF

    Contextual Info: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    ntd4905nntd4905n/d PDF