05MAR2005 Search Results

W45NM60

Abstract: STW45NM60 JESD97 650V
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

Contextual Info: 2 TH I S DRAW ING IS UNPUBLISHED. COPYRIGHT 20 RELEASED FOR PUBLICATION LOC REV 1SIONS D I ST AA BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. 22 p LTR DESCR1PTION DATE DWN APVD K REVISED PER EC 0 S I 1-0135-02 24FEB2003 DLD BDK L EC0S 1 1- 0050 - 05

STMicroelectronics smd marking code

Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product

W45NM60

Abstract: w45*60 STW45NM60 JESD97
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

STW45NM60

Abstract: W45NM60 JESD97 w45*60
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge