05JAN2010 Search Results

Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

KDS 4.000 Crystal

Abstract: AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

soc2920ahrb

Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■

2N2219AT1

Abstract: st marking code 2N2219AHR
Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

ma 7050

Abstract: GR-1089 SMP100LC SMP100LC-270 TRISIL SMP st L35
Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min

Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S RESERVED. LTR A2 MATER IAL HOUSING CONTACT INK : BL 2\ 3. DESCRIPTION REVISED P E R E C O - 09 - 0 2 8 5 3 9

Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

Contextual Info: ST3232EB ST3232EC ± 15 kV ESD protection 3 to 5.5 V low power, up to 250 kbps, RS-232 drivers and receivers Features • ESD protection for RS-232 I/O pins ■ ±15 kV human body model ■ ±8 kV IEC 1000-4-2 contact discharge ■ 300 µA supply current ■

KDS 4.000 Crystal

Abstract: KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

WW04

Abstract: TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873
Contextual Info: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)

2N2907AUB

Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB  ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

KDS 4.000 oscillator

Abstract: KDS 4.000 Crystal 1418h Oscillator KDS DOC KDS 4.000 Crystal oscillator Crystal oscillator kds 8.000 CXO 046
Contextual Info: M41T82 M41T83 Serial I2C bus real-time clock RTC with battery switchover Datasheet − production data Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows (SOX18) – Much better accuracies achievable using

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

AN3060 digital weight

Abstract: KDS 4.000 oscillator CXO 046 M41T8x M41T83R AN3060 CXO 049 M41T82 M41T83 VSOJ20
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

KDS 4.000 oscillator

Abstract: KDS 32kHZ crystal KDS 8
Contextual Info: M41T82 M41T83 Serial I2C bus real-time clock with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

5n52

Abstract: STB5N52K3 STF5N52K3 std5n52k 5N52K3 i-pak STD5n52 STB5N52K
Contextual Info: STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3 Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes STB5N52K3 STD5N52K3 STF5N52K3 STP5N52K3 STU5N52K3 VDSS 525 V RDS on max < 1.5 Ω • 100% avalanche tested

soc2907

Abstract: 2N2907AUB
Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

SOC2907A

Abstract: 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A 2N2907AHR
Contextual Info: 2N2907AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 2 3 -65°C to +200°C TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S RESERVED. LTR DESCRIPTION DATE R E V I S E D PER ECO- 09 - 0 2 8 5 3 9 Al F IN IS H : CONTACTS: 3.

Contextual Info: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77

Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.