05FLS4 Search Results

Contextual Info: ALPHA IN»/ S E M I C O N D U C T O bME D • 05flS4M3 OOOlñflñ 1«J3 ■ ALP . MMICs Diversity Switches in SOIC Packages

SMV1400-109

Contextual Info: ALPHA IN»/ S E d l C O N D U C T O bME D • 05flS4«»3 0 0 0 1 5 7 1 TTT ■ ALP Varactor Diodes Abrupt Varactors in Dual Common Cathode Configuration* 30V minimum 100 nA maximum Outline Drawing Number: 434-013 V B (10 mA): I r (2 4 V): C t-4 Part Number

Contextual Info: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­

DVB6723-04

Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18
Contextual Info: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­

DMJ3086

Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages

DMG-6414A

Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Contextual Info: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On

DME3256-000

Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On

varactor alpha

Abstract: DVG51 x-band varactor diode
Contextual Info: ALPHA IND/ S E M I C O N D U C T O R 4flE D • D 5 Ô 5 44 3 GG Ü1 32 Ö 104 * A L P GaAs Hyperabrupt Tuning Diodes ' T ' ö ‘7 ' 10' Features ■ ■ ■ ■ ■ ■ Description Alpha's GaAs hyperabrupt tuning varactors feature high Q up to 5,000 with constant gamma of 1.0 and 1.25

DDB-4503

Abstract: KA band detector
Contextual Info: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction

1N23C

Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows: