057N06N Search Results

057N06N

Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
Contextual Info: Type IPB054N06N3 G 057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

057N06N

Contextual Info: Type 057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification

IPB057N06N

Abstract: ipb057n
Contextual Info: Type 057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification

Contextual Info: Type 057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification

IPA057N06N3

Abstract: 057N06N IPA057N06N IPA057N06N3 G JESD22 PG-TO220-3-31 IPA057N06N3G
Contextual Info: 057N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 5.7 mΩ ID 60 A • Excellent gate charge x R DS(on) product (FOM)

057N06N

Abstract: 054N06N JESD22 PG-TO220-3
Contextual Info: IPB054N06N3 G 057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)