0570 DIODE Search Results

GRM1555C1H220J

Abstract: MABAES0029 MAX2043 MAX2043ETX MAX2043EVKIT
Contextual Info: 19-0570; Rev 0; 5/06 MAX2043 Evaluation Kit The MAX2043 evaluation kit EV kit simplifies the evaluation of the MAX2043 UMTS/WCDMA, DCS, PCS, and WiMAX base-station up/downconversion mixer. It is fully assembled and tested at the factory. Standard 50Ω SMA connectors are included on the EV kit’s input and

Contextual Info: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers

Contextual Info: r n THIS bftttWNC IS UWNJ6USHBT" RELEASED FM PiAUCAtWN c COPYW OHT - _ BY TYCO ELECTRONCS IOC WST R E V IS IO N S ALL ROUTS RESERVED. B 1 1APR200B R EV P E R ECO —0 8 —0 0 8 1 5 4 A MATERIALS: HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0.

BYS 045

Abstract: SCHOTTKY bys 50 BYS 045 v 75
Contextual Info: LB G A G rlB B SCHOTTKY DIODES RRM V Type <0.5 <0.5 <0.5 125 125 125 40 50 60 70 80 90 100 1.0 1.0 1.0 1.0 1.0 1.0 1.0 40 40 40 40 40 40 40' <0.70 <0.70 <0.70 <0.80 <0.80 <0.80 <0.80 1.0 1.0 1.0 1.0 1.0 1.0 1.0 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 150 150

eye response curve

Abstract: S250-DO S250 smd lg diode diode s250 diode LR smd Q62703-Q1539 TA 7503 Q62703-Q1516 Q62703-Q1517
Contextual Info: L Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-J f SIEMENS AKTIEN6ESELLSCHAF LED s-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

smd lg diode

Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Contextual Info: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

BZW08

Abstract: B2W06-154B B2W06-15B BZW05-33 bzwo6 bzw0628 B2W06-299B bzw05-37b ezw0620 BZW06-154
Contextual Info: TAIWAN SEMICONDUCTOR % BZW06 SERIES 600 Watts Transient Voltage Suppressor Diodes DO-15 RoHS C O M P L IA N C E 33 • - Features ❖ U L R e c o g n is e d ❖ <> <> ■> ■> F i l e it E - 5 G Q 0 5 r ia s lic package has Unde w rite rs Laboratory Flam m ability C lassification S 4V 0

BUT51P

Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS

C1359

Abstract: MJH16018 K2603 C26CH 340E-01 147J tg-500 175C MUR30100E dl 0165
Contextual Info: MOTOROLA SC DIODES/OPTO O rder this data sheet by M UR301 ODE/D b3b?555 0001311= 2 5SE D MOTOROLA V -Z 3 -0 7 I SEMICONDUCTOR TECHNICAL DATA M UR30100E S w itc h m o d e P o w e r R e c tifie r TM . . . designed for use in switching power supplies, inverters and as freewheeling diodes,

smd diode 708

Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±

diode U3j

Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Contextual Info: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high

plumbicon

Abstract: display dc05 display Vidicon 4806 PHILIPS WIDEBAND HYBRID IC MODULES IC12 Peripherals data handbook Philips Varistors
Contextual Info: Philips Semiconductors Data Communications Products Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete S em iconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly.

T39 diode

Contextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,

2N6122 transistor

Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Contextual Info: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —

MTP8N20

Abstract: MTM8N20 221A-06 25CC
Contextual Info: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,

SO47

Abstract: BSAU151 ZC700 ZC775 regulator 0-12 v AU151
Contextual Info: LUCAS S T A B I L I T Y ELEK LTD SbG7D13 0D0G07fci S « L U C B 81C 00076 D fll 100W SILICO N D IFFU S E D JU N CTIO N VO LTAGE REGU LATO RS J 8.2-10 0 V BREAKDOWN VO LTA G ES ZC700 SERIES The ZC700 series voltage regulators are case rated, silicon diffused junction stud-mounted

T 3512 H diode

Abstract: BU323P BU323AP diode led rojo diode T 3512 H a72S4 Lc 3362 M 3329 B1
Contextual Info: MOTORCLA SC XSTRS/R F ÎE E D I L3fc.?aS4 MOTOROLA T he BU323P, BU323APare m onolithic darlington transistors designed for autom otive ignition, switching regulator and m otor control applications. DARLINGTON NPN SILICON POWER TRANSISTORS 350 & 400 VOLTS 125 WATTS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 B U Z71A P o w er Field E ffe c t T ransistor N-Channel Enhancement-Mode Silicon Gate These TM O S III P ow er FETs are designed fo r lo w v o lta g e , high speed, lo w loss p o w e r sw itch in g a p p li­ ca tion s such as sw itch in g regu la to rs, converters,

BOX34C

Abstract: Transistors bd 133 BOX34B X33C 3B33C 750 V dc 100 amp GTO X33A bd 1382 semiconductor BDX33 bd 139 package
Contextual Info: m o to ro la sc x s trs /r 12E D I f b3t7SSM 000477=1 T | 7-33-29 • 7 ^ 3 3 -3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLIN GTO N COM PLEMENTARY SILICO N POWER TRANSISTORS . designed fo r geneial purpose and low speed NPN PMP BDX33 B0X33A BDX33B BDX33C

Contextual Info: DEVICE SPECIFICATION S O N E T/S D H /A TM C LO C K R ECOVERY UNIT FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop filter for clock recovery

Contextual Info: DEVICE SPECIFICATION SO N E T /SD H /AT M C L O C K R ECOVERY UNIT FEATURES S3027 GENERAL DESCRIPTION • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop

Contextual Info: DEVICE SPECIFICATION SO N E T /S D H /A T M C L O C K RECOVERY UNIT S3026 GENERAL DESCRIPTION FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop