0504330 Search Results

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

TPQ2222

Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
Contextual Info: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

transistor a1023

Abstract: ULN2083A transistor D 667 C S2083 transistor D 667 S2083H
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC T3 0504330 D S E M I C O N D S / ICS 0003022 T • ALGR 93 D 03 8 2 2 ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS Five Independent NPN Transistors ■ p \E S IG N E D for use in general purpose, medium

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

THC3251A

Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

transistor a13

Abstract: A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

faa 13

Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • 0504330 0Q03bfi7 Ö ■ T-91-01 PROCESS FAA Process FAA PNP High-Power Transistor Process FAA is a double-diffused epitaxial planar PN P silicon device designed as a high-speed, highcurrent switch and for use in other high-power

Contextual Info: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

Contextual Info: AL L E G R O MICROSYSTEMS INC » 0504330 0 0 0 3 7 Ô 1 Q I ALGR T-91-01 PROCESS BQB Process BQB Power Schottky Diode P ro c e ss B Q B is a silicon Schottky-barrier diode with a typical breakdown-voltage rating of 45V. D e ­ sign e d for high-power applications, it ca n sustain a

THC697

Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 S P R A GU E. “13 5 • 0504330 0003550 S E M I C O N D S / ICS 3 ■ AL 6R l'Alto 93 D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in

A80G

Abstract: back-emf motor A8932CLW
Contextual Info: ALLEGRO MICROSYSTEMS INC 33E 0504330 0005340 IAL6R VO ICE C O IL M O TO R D R IV E R Providing control and drive of the voice coil motor used for head positioning in 5 V disk drive applications,-the A8932CLW is a full-bridge driver which can be configured so that its output current is a direct

A13 transistor

Contextual Info: L _ . , . AL L E G R O M I C R O S Y S T E M S INC T3 » • 0504330 0003^5 7 ■ AL6R T-91-01 PROCESS FEE Process FEE NPN Small-Signal Transistor The F E E Process results in double-diffused silicon

UDN2951Z-2

Abstract: Q19A UDN2955W-2
Contextual Info: ALLEGRO MICROSYSTEMS INC 33E D 0504330 » A .* * - ' ^ .s U '.U L . JJ 0005155 L.' J « ’ » '.V 7 • /l|L6R Í f T - 5Z - n HIGH-CURRENT HALF-BRIDGE POWER DRIVER GROUND ~ SUPPLY E l NO CONNECTION E l SOURCE OUT E l o SOURCE IN E l SENSE E l ENABLE | SINK IN E l

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0 0 0 3 7 clb 2 ■ ALGR T-91-01 PROCESS YAA Process YAA Power Diode Process YAA is a silicon epitaxial P on N diode designed for high-power applications. It can operate with a forward current of up to 3A. r * - ABSOLUTE MAXIMUM RATINGS

MPS3405C

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: ALLEGRO MICROSYSTEMS INC 33 E D 0504330 000Sb2ô 2 BIAL GR COUNTDOWN POWER TIMERS MODE SELECT NO CONNECTION NO CONNECTION Dwg. PS-016 The ULQ2436M and ULQ2437M are rugged, long-duration count­ down timers specifically designed to operate in an automotive or

Contextual Info: AL L E G R O MICROSYSTEMS INC T3 » • 0504330 0003bôl 7 ■ ALGR T-91-01 PROCESS DMA Process DMA NPN Small-Signal Transistor Process DMA is a double-diffused NPN silicon epitaxial planar device designed for use in VH F and UHF amplifiers, mixers, and oscillators.