04SEP07 Search Results

Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

tgl200

Contextual Info: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only

Contextual Info: SMBG5.0 thru SMBG188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

SMBJ188CA

Abstract: JESD22-B102 J-STD-002 SMBJ10 SMBJ10CA SURGE PROTECTORS
Contextual Info: SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: SM5A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop d* e t n e Pat

TPSMC6.8

Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only *

Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

TFDU6301

Abstract: TFDU6301-TR3 TFDU6301-TT3
Contextual Info: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data

SMBJ188CA

Abstract: JESD22-B102 J-STD-002 SMBJ10 SMBJ10CA SMBJ30A DO-214AA km 5 SMBJ5.0A vishay SMBJ8.0A
Contextual Info: SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

9327

Abstract: transistor M 9741 AN609 SUD19P06-60
Contextual Info: SUD19P06-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7804

Abstract: AN609 SUD50N03-09P
Contextual Info: SUD50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

530165-1

Abstract: 9306 AN609 SUD50N03-11 530165
Contextual Info: SUD50N03-11_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SMBJ188CA

Abstract: JESD22-B102D J-STD-002B SMBJ10CA smbj12a general semiconductor SMBJ17A SMBJ8.0A SMBJ120A
Contextual Info: SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

vishay mk7

Abstract: vishay ck7 J-STD-002 SM6T12CA
Contextual Info: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform

6ka24he3

Contextual Info: 6KA24 Vishay General Semiconductor Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Excellent clamping capability • Low leakage current • High surge capability

gez F

Abstract: marking ghm GFZ 51 SMCG14A gfx 77
Contextual Info: SMCG5.0 thru SMCG188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

shock sensor ps-1

Abstract: DUXL05D DUXL20D DUXL30D Honeywell Silicon Pressure Sensor
Contextual Info: FO-52847-F DUXL ET D EPI TIED HIGH CATALOG LISTINGS PRESSURE REFERENCE SERIES ULTRALOW PRESSURE UNCALIBRATED mV D DUXLO I D DUXL05D D U X L I OD DUXU20D DUXL30D D I B E E R E N T I AL PRESSURE RANGE 01, 05 , 10, 20 , 30 NOTES A L L P A R A M E T E R S A R E M E A S U R E D A T 4 . 5 V d c E X C I T A T I O N , A N D ROOM T E M P E R A T U R E U N L E S S

smbj170 vishay

Abstract: SMBJ188CA SMBJ17A SMBJ8.0A SMBJ120A
Contextual Info: SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: P4KE530 & P4KE550 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time • Low incremental surge resistance

Contextual Info: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec

Contextual Info: LCE6.5 thru LCE28A Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : 0.01 % • Excellent clamping capability