04NOV2003 Search Results

p80nf10

Abstract: b80nf10 P80NF-10
Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

SOH-28

Contextual Info: M40Z300 M40Z300W 5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs Not recommended for new design Features • Converts low power SRAM into NVRAMs ■ Precision power monitoring and power switching circuitry ■ Automatic WRITE-protection when VCC is outof-tolerance

M40Z300

Abstract: M40Z300W M4ZXX-BR00SH SOH28
Contextual Info: M40Z300 M40Z300W 5V or 3V NVRAM supervisor for up to 8 LPSRAMs Features • Converts low power SRAM into NVRAMs ■ Precision power monitoring and power switching circuitry ■ Automatic WRITE-protection when VCC is outof-tolerance ■ Two-input decoder allows control for up to 8

Contextual Info: TH I S D R A W I NG IS COPYRIGHT UNPUBLI S H E D . 20 RELEASED BY TYCO ELECTRONICS CORPORATION POR ALL REVISIONS P U B L I C A T I ON RIGHTS RESERVED. LTR BE ED WITH APPROPRIATE BR USRD WITH HOUSING _3\ O R T I O N A L DESCR P T I ON DATE DWN ARVD REVISED

Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

M40Z300

Abstract: M40Z300W M4ZXX-BR00SH SOH28
Contextual Info: M40Z300 M40Z300W 5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs Not recommended for new design Features • Converts low power SRAM into NVRAMs ■ Precision power monitoring and power switching circuitry ■ Automatic WRITE-protection when VCC is outof-tolerance

P80NF10

Abstract: STP80NF10 B80NF10 JESD97 STB80NF10 STB80NF10T4 p80n
Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features • Type VDSS RDS on max ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 3 3 1 ■ 100% Avalanche tested

p80nf10

Abstract: b80nf10 b80nf1 P80NF-10 P80NF STB80NF10 STB80NF10T4 p80n equivalent to P80NF10 STP80NF10
Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

P80NF10

Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

b80nf1

Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features Type • RDS on max VDSS ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 1 ■ 100% Avalanche tested

p80nf10

Abstract: P80NF b80nf1 b80nf10 STP-80 STB80NF10T4 STP80NF10 equivalent to P80NF10 STB80NF10 stp80
Contextual Info: STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features • Type VDSS RDS on max ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 3 3 1 ■ 100% Avalanche tested

P80NF10

Abstract: B80NF10 equivalent to P80NF10 MOSFET 50V 100A TO-220 JESD97 STB80NF10 STB80NF10T4 STP80NF10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested