04MAY10 Search Results

vskt

Abstract: VSKT152
Contextual Info: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips

LH1540

Abstract: LH1540AAB LH1540AABTR LH1540AT dip6 IL-250 LH1540 SSR
Contextual Info: LH1540AAB, LH1540AABTR, LH1540AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 350 V • Load current 120 mA

E78996 datasheet bridge

Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Amphenol SMA

Contextual Info: REVISIONS 135101-07-XX.XX NOTES: DRAWING NO. 1. 2. PERFORM CONTINUITY & HI-POT TESTING. REV THIRD ANGLE PROJ. PACKAGE INDIVIDUALLY IN HEAT SEALED POLY BAG. DESCRIPTION DATE ECO APPR A RELEASE TO MFG. 04-May-10 - CL B NOTE ADDED 05-Jul-10 2070 KR TAG IN BAG WITH "AMPHENOL CONNEX,135101-07-XX.XX AND DATE CODE".

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

Contextual Info: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability

diode BY 127

Contextual Info: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

width50s

Abstract: GA100TS120UPBF
Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

E78996 datasheet bridge

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

E78996

Abstract: IR E78996 E78996 datasheet vskd INT-A-PAK weight
Contextual Info: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability

LH1535

Abstract: LH1535AAB LH1535AABTR LH1535AT SOLID STATE SWITCH c18750
Contextual Info: LH1535AAB, LH1535AABTR, LH1535AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 400 V • Load current 120 mA

VSKT162

Abstract: 016W vsk162
Contextual Info: VSK.136.PbF, VSK.142.PbF, VSK.162.PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

Contextual Info: 2 3 4 5 6 7 A 49,69 ln 47,48 47,23 46,28 ON VJD LO Osl cd R 1, 0 0 x 4 Position 1 n P o s i t i on 34 Osl @ 11 i o JUUUUUUUUUUUUUUUU M AAAAAAAAAAAAJD uL 1,27 5,60 41,91 P o s i t i on 68 o ]d 1,27 P o s i t i on 35 OsJ '-d’ 3,30 2,345 41,91 COVER ONE

40HFL40S02

Abstract: IRFP460 VSKDS203
Contextual Info: VSKDS203/100 Vishay High Power Products ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 100 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL pending • Compliant to RoHS directive 2002/95/EC

LH1500

Abstract: LH1500AAB LH1500AABTR LH1500AT
Contextual Info: LH1500AAB, LH1500AABTR, LH1500AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω • Load voltage 350 V • Load current 150 mA • High surge capability

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VCS101

Contextual Info: VCS101, VCS103, VCS401 Vishay Foil Resistors High Precision Bulk Metal Foil Power Current Sense Resistors with TCR of ± 15 ppm/°C from 0.005 Ω FEATURES • Temperature coefficient of resistance TCR : ± 20 ppm/°C (available to ± 15 ppm/°C) NEW • Resistive tolerance: to ± 0.1 %