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GA200TS60UPBF Datasheets (1)

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International Rectifier

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GA200TS60UPBF		International Rectifier	TRANS IGBT MODULE N-CH 600V 200A 11INT-A-PAK	Original	PDF	234.8KB	10

GA200TS60UPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
E78996 datasheet bridge Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	ga200ts60upbf e78996 2002/95/ec 18-jul-08 +4e78996 datasheet bridge e78996 bridge igbt high voltage low current dc265a	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	ga200ts60upbf e78996 2002/95/ec 11-mar-11	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses	Original	ga200ts60upbf 18-jul-08	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode	Original	ga200ts60upbf 12-mar-07	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	ga200ts60upbf e78996 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode	Original	ga200ts60upbf 12-mar-07	PDF
200A25 Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses	Original	ga200ts60upbf 18-jul-08 200a25	PDF
E78996 diode Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	ga200ts60upbf e78996 2002/95/ec 11-mar-11 +1e78996 diode	PDF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses	Original	ga200ts60upbf e78996 2002/95/ec 2011/65/eu +112-mar-12	PDF