04JUN2003 Search Results

Contextual Info: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of page-erasable Flash memory

M45PE20

Abstract: ST10
Contextual Info: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM

Contextual Info: M45PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50-MHz SPI bus interface Preliminary Data Feature summary • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 16 Mbit of Page-Erasable Flash memory

Contextual Info: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

M45PE10

Contextual Info: M45PE10 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1-Mbit of page-erasable Flash memory

M45PE16

Contextual Info: M45PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Preliminary Data Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 16 Mbit of Page-Erasable Flash memory

M45PE80

Abstract: numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package
Contextual Info: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.7 to 1.95V ■ ACCESS TIME: 70ns, 80ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ COMPATIBLE WITH STANDARD LPSRAM

Contextual Info: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features SPI bus compatible serial interface 75 MHz clock rate maximum 2.7 V to 3.6 V single supply voltage 1 Mbit of page-erasable Flash memory Page size: 256 bytes

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

Marking STMicroelectronics Single digit week

Abstract: VDFPN8 package M45PE80 SO16 wide package
Contextual Info: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory

Contextual Info: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

M45PE10

Abstract: ST10
Contextual Info: M45PE10 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

Contextual Info: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

M45PE80

Abstract: ST10
Contextual Info: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

AI06811B

Contextual Info: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms

Contextual Info: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

M45PE10

Contextual Info: M45PE10 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of Page-Erasable Flash memory