M69AR024B Search Results

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.7 to 1.95V ■ ACCESS TIME: 70ns, 80ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ COMPATIBLE WITH STANDARD LPSRAM

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

M69AR024B

Abstract: TFBGA48
Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O

Contextual Info: M69AR024B 16 Mbit 1M x16 1.8V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.7 to 1.95V ■ ACCESS TIME: 80ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ COMPATIBLE WITH STANDARD LPSRAM ■ TRI-STATE COMMON I/O

Contextual Info: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE

numonyx

Abstract: M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h
Contextual Info: M36W0R6040T1 M36W0R604BT1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • Multi-chip package – 1 die of 64 Mbit (4 Mb x 16) Flash memory – 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM ■

8811h

Abstract: flash E2p A0-A21 J-STD-020B M36D0R6040T0 M69AR024B
Contextual Info: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE

M58WR064KT

Abstract: M36W0R M36W0R604
Contextual Info: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash

M36W0R5040

Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h
Contextual Info: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM

Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M36W0R6040T

Abstract: A0-A21 J-STD-020B M36W0R6040B0 M36W0R6040T0 M69AR024B
Contextual Info: M36W0R6040T0 M36W0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM