04JAN2006 Search Results

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

Contextual Info: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)

SD2942

Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Contextual Info: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

Contextual Info: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

GW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction

Contextual Info: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

L80N4LL

Contextual Info: STL80N4LL N-CHANNEL 40V - 0.0046Ω - 80A PowerFLAT 6x5 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE STL80N4LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 40 V < 0.005 Ω 20 A (2) TYPICAL RDS(on) = 0.0046 Ω @ 10V

Contextual Info: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS

sd2943

Abstract: 200B 700B M177 SD2933
Contextual Info: SD2943 RF Power Transistor HF/VHF/UHF N - Channel MOSFETs General Features • HIGH POWER CAPABILITY ■ POUT = 350W MIN. WITH 22dB GAIN @ 30 MHz ■ PSAT = 450 W ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES ■ GOLD METALLIZATION

JESD97

Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Contextual Info: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS

Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •

st 54003

Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

STL80N4LLF3

Abstract: JESD97 L80N4LLF3 st MARKING E4
Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio

Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

IGBT STGW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A High frequency operation 2 3 3 Lower CRES / CIES ratio (no cross-conduction

STGW30NC60W

Abstract: STGP30NC60W GW30NC60W GP30NC60W JESD97 STGB30NC60W STGB30NC60WT4
Contextual Info: STGB30NC60W - STGP30NC60W STGW30NC60W 30 A - 600 V - ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility 2 Applications ■ ■ 3 3 1 1 TO-247 High frequency motor controls, inverters, ups

Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

sd2943

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

P7NK30Z

Contextual Info: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω

IGBT STGW30NC60W

Abstract: GW30NC60W GP30NC60W JESD97 STGP30NC60W STGW30NC60W
Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

IGBT STGW30NC60W

Abstract: W30NC60W STGW30NC60W schematic diagram UPS 600 STGP30NC60W W30NC60
Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • Type VCES VCE sat (Max)@ 25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI

B5568

Abstract: EELXT351E 24903* intel
Contextual Info: LXT351 T1/E1 Short Haul Transceiver with Crystal-less Jitter Attenuation Datasheet The LXT351 is a full-featured, fully-integrated transceiver for T1 and E1 short-haul applications. The LXT351 is software switchable between T1 and E1 operation, and offers pulse

RCW0

Abstract: w1p10 STR71x STR73x "W1P" W1P 17 0xE6000010 B1F01 UM0116 0x55aa55aa
Contextual Info: UM0116 User manual STR7 family Flash programming Introduction This reference manual describes how to program the Flash memory of an STR7 microcontroller. The STR7 embedded Flash memory can be programmed using In-Circuit Programming or In-Application programming.