045N10N Search Results

045N10N Price and Stock

Filter by Manufacturer

Infineon Technologies AG


Infineon Technologies AG IPP045N10N3GXKSA1 MOSFETs N-Ch 100V 100A TO220-3 OptiMOS 3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPP045N10N3GXKSA1		5,807			1 $3.03 10 $1.59 100 $1.44 1000 $1.18 10000 $1.18	Buy Now
Infineon Technologies AG IPP045N10N3 G MOSFETs N-Ch 100V 100A TO220-3 OptiMOS 3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPP045N10N3 G		1,193			1 $3.26 10 $2.13 100 $1.63 1000 $1.18 10000 $1.18	Buy Now
Infineon Technologies AG IPA045N10N3 G MOSFETs N-Ch 100V 64A TO220FP-3 OptiMOS 3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPA045N10N3 G		874			1 $3.31 10 $1.67 100 $1.51 1000 $1.25 10000 $1.25	Buy Now
Infineon Technologies AG IPI045N10N3 G MOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPI045N10N3 G					1 $4.25 10 $2.79 100 $2.13 1000 $1.64 10000 $1.64	Get Quote
Infineon Technologies AG IPI045N10N3GXKSA1 MOSFETs N-Ch 100V 100A I2PAK-3 OptiMOS 3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPI045N10N3GXKSA1					1 $4.05 10 $2.07 100 $1.88 1000 $1.64 10000 $1.64	Get Quote

045N10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IPA045N10N3 Abstract: THV-150 Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	IPA045N10N3 PG-TO220-FP 045N10N THV-150	PDF
045n10n Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10	PDF
045n10n Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10	PDF
045n10n Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50 Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50	PDF
045N10 Abstract: 045N10N Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N	PDF