04 TRANSISTOR Search Results

ESR3-NO-31

Abstract: TPD11DIL EMR4-W500-2-C EMR4-W580-2-D EMR4-W500-2-D VS1DIL esr4-no-31 ETR4-69-A ETR4-70-A DIL-R-44D
Contextual Info: 04/001 Moeller HPL0211-2001/2002 Control relays Contactor relays AC and DC operated AC and DC operated System overview Page 04/002 ‘Easy’ control relays Basic units 04/006 04/006 Accessories Expansion units 04/008 04/007 Technical data 04/037 Dimensions

Contextual Info: REVISIONS PART NO. MPX02P ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED Kiran 15/04/09 Suresh 15/04/09 Farnell 29/04/09 Dimensions: Inches Millimetres Part Number Table Description Part Number Transistor Pad, Black TO92 MPX02P http://www.farnell.com

80NF03

Abstract: 80NF03L 80NF03L-04 STP80NF03L-04 STB80NF03L-04T4 80nf STB80NF03L-04 STB80NF03L-04-1 TRANSISTOR 023
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB80NF03L-04/-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

80NF03

Abstract: 80NF03L 80nf03l-04 STP80NF03L-04
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

80NF03

Abstract: 80NF03L 80nf03l-04 80nf 3240A STP80NF03L-04 STB80NF03L-04 N STB80NF03L-04 STB80NF03L-04-1 STB80NF03L-04T4
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

3PN0604

Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow

2n0404

Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
Contextual Info: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2

4P03L04

Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
Contextual Info: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

3N0404

Abstract: infineon smd package
Contextual Info: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1

IPP120P04P4-04

Abstract: 340ua IPI120P04P4-04 4P04
Contextual Info: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

IPB100P03P3L-04

Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
Contextual Info: IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS -P Trench Power-Transistor Product Summary V DS Features -30 R DS on ,max (SMD version) • P-channel - Logic Level - Enhancement mode 4 ID • Automotive AEC Q101 qualified V mΩ -100 A • MSL1 up to 260°C peak reflow

3PN06L04

Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow

2n0404

Abstract: DD 127 D TRANSISTOR TRANSISTOR SMD MARKING CODE 04 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-04 IPI80N04S2-04 IPP80N04S2-04 PG-TO263-3-2 SP0002-18154
Contextual Info: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3PN0604

Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

3PN06L04

Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

2n0404

Contextual Info: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N0404

Abstract: IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE
Contextual Info: IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.8 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

2n03l04

Abstract: smd TRANSISTOR code marking 8K 35G100 SPB80N03S2L-04 SPI80N03S2L-04 SPP80N03S2L-04 60E-12 ANPS071E Q67042-S4112 2N03L
Contextual Info: SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.9 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2

Contextual Info: REV. DESCRIPTION A B C D DATE APPROVED 04/05/04 11/04/04 07/12/11 03/13/12 Engineering Release Engineering Update Request for Quotation Dimensioned Bumps M. C. M. C. T. Y. T. Y. 0.20 [5.1mm] 0.22 [5.5mm] 0.035 [0.9mm] —«- r 0.015 [0.4mm] TYP. 0.071 [1.8mm]

4n0404

Abstract: IPB80N04S4-04 IPP80N04S4-04 IPI80N04S4-04 PG-TO263-3-2 IPB80N04S4
Contextual Info: IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.2 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

PC MOTHERBOARD CIRCUIT diagram

Abstract: diode c24 06 6D LM386 BLOCK DIAGRAM DESCRIPTION hcm1206 5V power supply using bridge circuit using 7805 2 pin 2.5 3.5 ptt motorola jack diagram LM386 Audio Amplifier computer schematic power supply circuit diagram 4W53 computer motherboard circuit diagram
Contextual Info: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board for the Si2493/57/34/15/04 with a UART Interface Description The global Si2493/57/34/15/04-EVB evaluation board provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The Si2493/57/

4N04L04

Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
Contextual Info: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

4P04L04

Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
Contextual Info: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow